JAN1N5550US

Manufacturer :

Microchip Technology

Product Category :

Diodes - Rectifiers - Single

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Peak Reverse Current :

1μA

Current - Reverse Leakage @ Vr :

1μA @ 200V

Element Configuration :

Single

Forward Current :

5A

Additional Feature :

High Reliability

JESD-609 Code :

e0

Voltage - Forward (Vf) (Max) @ If :

1.2V @ 9A

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

2 μs

Speed :

Standard Recovery >500ns, > 200mA (Io)

ECCN Code :

EAR99

Case Connection :

Isolated

Number of Terminations :

2

Radiation Hardening :

No

Peak Non-Repetitive Surge Current :

100A

HTS Code :

8541.10.00.80

Max Repetitive Reverse Voltage (Vrrm) :

200V

Qualification Status :

Qualified

Packaging :

Bulk

Package / Case :

SQ-MELF, B

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Number of Elements :

1

Number of Pins :

2

Operating Temperature - Junction :

-65°C~175°C

Output Current-Max :

3A

Reference Standard :

MIL-19500

Peak Reflow Temperature (Cel) :

235

Diode Type :

Standard

Application :

Power

Terminal Position :

END

Terminal Finish :

Tin/Lead (Sn/Pb)

Mount :

Surface Mount

Terminal Form :

WRAP AROUND

Diode Element Material :

SILICON

Series :

Military, MIL-PRF-19500/420

Max Operating Temperature :

175°C

Number of Phases :

1

Time@Peak Reflow Temperature-Max (s) :

20

Published :

1997

Forward Voltage :

1.2V

Current - Average Rectified (Io) :

3A