JAN1N5550

Manufacturer :

Microchip Technology

Product Category :

Diodes - Rectifiers - Single

Speed :

Standard Recovery >500ns, > 200mA (Io)

Case Connection :

Isolated

Max Repetitive Reverse Voltage (Vrrm) :

200V

Current - Reverse Leakage @ Vr :

1μA @ 200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

2 μs

Number of Elements :

1

Number of Phases :

1

Max Reverse Voltage (DC) :

200V

Max Operating Temperature :

175°C

Package / Case :

B, Axial

Output Current-Max :

5A

HTS Code :

8541.10.00.80

Element Configuration :

Single

Peak Reverse Current :

1μA

Packaging :

Bulk

Operating Temperature - Junction :

-65°C~175°C

Application :

Power

Terminal Finish :

Tin/Lead (Sn/Pb)

Average Rectified Current :

3A

Diode Element Material :

SILICON

JESD-609 Code :

e0

Number of Terminations :

2

Number of Pins :

2

Min Operating Temperature :

-65°C

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Diode Type :

Standard

RoHS Status :

Non-RoHS Compliant

Factory Lead Time :

8 Weeks

Terminal Form :

Wire

Forward Current :

5A

Peak Non-Repetitive Surge Current :

100A

Lead Free :

Contains Lead

Published :

1997

Qualification Status :

Qualified

Mount :

Through Hole

Mounting Type :

Through Hole

Voltage - Forward (Vf) (Max) @ If :

1.2V @ 9A

Series :

Military, MIL-PRF-19500/420

ECCN Code :

EAR99

Radiation Hardening :

No

Forward Voltage :

1.2V