J309

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - RF

JESD-609 Code :

e0

Terminal Position :

BOTTOM

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Frequency :

100MHz

HTS Code :

8541.21.00.75

Breakdown Voltage :

-25V

Max Power Dissipation :

625mW

FET Technology :

JUNCTION

Current - Test :

10mA

Radiation Hardening :

No

Weight :

201mg

Power Dissipation :

350mW

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Packaging :

Bulk

Length :

5.2mm

Drain to Source Voltage (Vdss) :

25V

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.19mm

Number of Pins :

3

Number of Elements :

1

Current Rating :

10mA

Base Part Number :

J309

Peak Reflow Temperature (Cel) :

240

Lead Free :

Lead Free

Termination :

Through Hole

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

-25V

Voltage - Test :

10V

Mount :

Through Hole

Pin Count :

3

Noise Figure :

3 dB

Transistor Application :

AMPLIFIER

Continuous Drain Current (ID) :

30mA

Terminal Finish :

Tin/Lead (Sn/Pb)

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

Depletion Mode

Height :

5.33mm

Element Configuration :

Single

Number of Terminations :

3

Pbfree Code :

No

Max Operating Temperature :

150°C

Transistor Type :

N-Channel JFET

Gain :

16dB

Drain to Source Breakdown Voltage :

25V

Feedback Cap-Max (Crss) :

2.5 pF

REACH SVHC :

No SVHC