J309

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Breakdown Voltage :

25V

Operating Mode :

Depletion Mode

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

30

Noise Figure :

3 dB

Frequency :

100MHz

JESD-609 Code :

e0

Termination :

Through Hole

Packaging :

Bulk

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Continuous Drain Current (ID) :

30mA

Breakdown Voltage :

-25V

Width :

4.19mm

REACH SVHC :

No SVHC

Gain :

16dB

FET Technology :

JUNCTION

Current Rating :

10mA

Max Operating Temperature :

150°C

Element Configuration :

Single

Pin Count :

3

Weight :

201mg

Transistor Application :

AMPLIFIER

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Lead Free :

Lead Free

Base Part Number :

J309

RoHS Status :

Non-RoHS Compliant

Current - Test :

10mA

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Type :

N-Channel JFET

Power Dissipation :

350mW

Number of Pins :

3

Terminal Position :

BOTTOM

Drain to Source Voltage (Vdss) :

25V

Feedback Cap-Max (Crss) :

2.5 pF

Gate to Source Voltage (Vgs) :

-25V

Peak Reflow Temperature (Cel) :

240

Voltage - Rated DC :

25V

Voltage - Test :

10V

Number of Elements :

1

Mount :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Pbfree Code :

No

Max Power Dissipation :

625mW

Length :

5.2mm

Height :

5.33mm