ISL89165FRTBZ

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Mfr.Part #
ISL89165FRTBZ
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
Datasheet
Download
Description
IC GATE DRVR LOW-SIDE 8TDFN
Stock
2,858
In Stock :
2,858

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
Peak Reflow Temperature (Cel) :
260
Nominal Supply Current :
5mA
Turn On Time :
0.05 μs
Terminal Pitch :
0.65mm
Qualification Status :
Not Qualified
Current - Output :
6A
Factory Lead Time :
5 Weeks
Max Supply Voltage :
16V
Rise Time :
20ns
Power Dissipation-Max :
33.3W
Terminal Position :
Dual
Max Operating Temperature :
125°C
Number of Terminations :
8
Output Peak Current Limit-Nom :
6A
Turn Off Time :
0.05 μs
Max Output Current :
6A
Terminal Finish :
Matte Tin (Sn) - annealed
Width :
3mm
Min Supply Voltage :
4.5V
Temperature Grade :
Automotive
Number of Drivers :
2
Terminal Form :
NO LEAD
Published :
2010
Mount :
Surface Mount
Turn On Delay Time :
25 ns
Supply Voltage :
12V
Number of Pins :
8
Min Operating Temperature :
-40°C
Fall Time (Typ) :
20 ns
Time@Peak Reflow Temperature-Max (s) :
30
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
High Side Driver :
yes
Turn-Off Delay Time :
25 ns
ECCN Code :
EAR99
Number of Functions :
1
Length :
3mm
Interface IC Type :
AND GATE BASED MOSFET DRIVER
RoHS Status :
RoHS Compliant
JESD-609 Code :
e3
Datasheets
ISL89165FRTBZ
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) ISL89165FRTBZ from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Number of Pins:8, ISL89165FRTBZ pinout, ISL89165FRTBZ datasheet PDF, ISL89165FRTBZ amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) ISL89165FRTBZ ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) ISL89165FRTBZ


Gate Drivers Intersil (Renesas Electronics Corporation) ISL89165FRTBZ Overview

The ISL89165FRTBZ by Intersil, a part of Renesas Electronics Corporation, represents a cutting-edge solution in low-side gate driving technology. This IC gate driver is housed in an efficient 8TDFN package, designed to deliver high performance with minimal power loss. Its compact form factor and robust design make the ISL89165FRTBZ an ideal choice for advanced electronics applications requiring precise control of power switches. With its high-speed operation and durable construction, the Gate Drivers Intersil (Renesas Electronics Corporation) ISL89165FRTBZ ensures reliability and efficiency in managing power transistors and MOSFETs, making it indispensable in both commercial and industrial settings.

ISL89165FRTBZ Features

The ISL89165FRTBZ gate driver is equipped with numerous features that enhance its performance and suitability for demanding applications. These include high peak output current, integrated under-voltage lockout, fast propagation delays, and a robust output drive capable of handling frequencies up to 1MHz. Furthermore, the device boasts excellent thermal performance and is designed to operate over a wide temperature range, ensuring reliability under varying environmental conditions.

ISL89165FRTBZ Applications

  • Motor Control Systems: The ISL89165FRTBZ can be used to drive low-side MOSFETs in motor control circuits, improving the efficiency and response time of motor operations.
  • Power Supply Units: In power supplies, this gate driver helps in managing the switching operations, significantly enhancing power efficiency and stability.
  • LED Lighting: It is also suitable for driving switches in LED lighting systems, providing reliable performance and extending the lifespan of the lighting components.
  • Automotive Applications: The robustness of the ISL89165FRTBZ makes it a perfect choice for automotive electronics, where durability and consistent performance are crucial.
  • Solar Inverters: This driver is used in solar inverters to efficiently manage the power conversion process, ensuring maximum conversion efficiency and reliability in energy-intensive environments.
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