ISL6614BIBZ-T

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Mfr.Part #
ISL6614BIBZ-T
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
SOIC
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 14SOIC
Stock
11,782
In Stock :
11,782

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
Interface IC Type :
HALF BRIDGE BASED MOSFET DRIVER
ECCN Code :
EAR99
Number of Functions :
2
Number of Outputs :
4
Length :
8.65mm
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Number of Terminations :
14
Terminal Form :
Gull wing
Min Supply Voltage :
7V
Package / Case :
SOIC
Max Operating Temperature :
85°C
Current - Output :
3A
Mount :
Surface Mount
Power Dissipation-Max :
1W
Pin Count :
14
Nominal Supply Current :
7.1mA
Rise Time :
26ns
Terminal Position :
Dual
Width :
3.9mm
Time@Peak Reflow Temperature-Max (s) :
40
Temperature Grade :
Industrial
Height Seated (Max) :
1.75mm
Radiation Hardening :
No
Published :
2001
Supply Voltage :
12V
RoHS Status :
RoHS Compliant
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Max Supply Voltage :
13.2V
High Side Driver :
yes
Packaging :
Tape and Reel
Terminal Finish :
Matte Tin (Sn) - annealed
Number of Drivers :
2
JESD-609 Code :
e3
Min Operating Temperature :
-40°C
Fall Time (Typ) :
18 ns
Datasheets
ISL6614BIBZ-T
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) ISL6614BIBZ-T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:14, Package / Case:SOIC, ISL6614BIBZ-T pinout, ISL6614BIBZ-T datasheet PDF, ISL6614BIBZ-T amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) ISL6614BIBZ-T ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) ISL6614BIBZ-T


Gate Drivers Intersil (Renesas Electronics Corporation) ISL6614BIBZ-T Overview

Introducing the cutting-edge ISL6614BIBZ-T, a high-performance Integrated Circuit Gate Driver meticulously crafted by Intersil, now a part of Renesas Electronics Corporation. This innovative driver is tailored to optimize the operation of half-bridge configurations, ensuring superior performance and reliability in a wide array of applications.

ISL6614BIBZ-T Features

  • Advanced Half-Bridge Configuration: The ISL6614BIBZ-T boasts a sophisticated half-bridge configuration, enabling seamless integration into various circuit designs.
  • Precision Gate Driving: With its precision gate driving capability, this IC ensures optimal switching characteristics, minimizing power losses and enhancing overall efficiency.
  • Robust Design: Engineered with reliability in mind, the ISL6614BIBZ-T features a robust design that withstands harsh operating conditions, making it ideal for demanding industrial environments.
  • High Output Current: This gate driver delivers high output currents, empowering your system to drive power MOSFETs with exceptional speed and accuracy.
  • Enhanced Thermal Performance: Equipped with features for enhanced thermal performance, the ISL6614BIBZ-T dissipates heat efficiently, maintaining stable operation even under heavy loads.

ISL6614BIBZ-T Applications

  • Industrial Automation: The ISL6614BIBZ-T finds its application in industrial automation systems, where precise control of power delivery is crucial for maximizing efficiency and productivity. It ensures seamless operation of half-bridge configurations in motor control units, robotics, and PLCs.
  • Renewable Energy Systems: In renewable energy systems such as solar inverters and wind turbine converters, the ISL6614BIBZ-T plays a pivotal role in managing power flow with high efficiency and reliability. Its precision gate driving capability optimizes energy conversion, contributing to the sustainable generation of clean energy.
  • Electric Vehicle (EV) Charging Infrastructure: With the electrification of transportation on the rise, the ISL6614BIBZ-T is instrumental in EV charging infrastructure, facilitating rapid and efficient charging processes. It ensures smooth operation of power electronics in EV chargers, enabling faster adoption of electric vehicles.
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