ISL6613BIBZ-T

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Mfr.Part #
ISL6613BIBZ-T
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
SOIC
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Stock
48,843
In Stock :
48,843

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
Peak Reflow Temperature (Cel) :
260
Power Dissipation-Max :
800mW
Pin Count :
8
Height Seated (Max) :
1.75mm
Package / Case :
SOIC
Interface IC Type :
HALF BRIDGE BASED MOSFET DRIVER
Current - Output :
3A
Operating Supply Current :
5mA
RoHS Status :
RoHS Compliant
Min Supply Voltage :
7V
Rise Time :
26ns
Max Output Current :
3A
JESD-30 Code :
R-PDSO-G8
Temperature Grade :
Industrial
Number of Terminations :
8
Lead Free :
Lead Free
Terminal Form :
Gull wing
Output Peak Current Limit-Nom :
3A
Mount :
Surface Mount
Number of Drivers :
2
Terminal Finish :
Matte Tin (Sn) - annealed
ECCN Code :
EAR99
Max Supply Voltage :
13.2V
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Qualification Status :
Not Qualified
JESD-609 Code :
e3
High Side Driver :
yes
Width :
3.9mm
Max Operating Temperature :
85°C
Supply Voltage :
12V
Length :
4.9mm
Fall Time (Typ) :
18 ns
Min Operating Temperature :
-40°C
Number of Functions :
1
Published :
2001
Supply Voltage1-Nom :
12V
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Position :
Dual
Datasheets
ISL6613BIBZ-T
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) ISL6613BIBZ-T from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOIC, Number of Terminations:8, ISL6613BIBZ-T pinout, ISL6613BIBZ-T datasheet PDF, ISL6613BIBZ-T amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) ISL6613BIBZ-T ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) ISL6613BIBZ-T


Gate Drivers Intersil (Renesas Electronics Corporation) ISL6613BIBZ-T Overview

The ISL6613BIBZ-T from Intersil (Renesas Electronics Corporation) is a robust gate driver designed to enhance the efficiency and performance of your power management systems. This specialized IC ensures reliable switching with its dual outputs, capable of driving N-Channel MOSFETs or IGBTs in a half-bridge configuration. With its compact 8SOIC package, the ISL6613BIBZ-T is ideal for applications requiring a small footprint without compromising on power and reliability. The Gate Drivers Intersil (Renesas Electronics Corporation) ISL6613BIBZ-T facilitates improved thermal performance and faster switching speeds, making it a pivotal component for high-efficiency power systems.

ISL6613BIBZ-T Features

  • High peak drive current capability of 2A on both high-side and low-side drivers.
  • Bootstrap functionality with integrated under-voltage lockout ensures stable operation under varying power conditions.
  • Independent inputs for high side and low side gates provide flexible control options and simpler integration into system designs.
  • Protection features such as cross-conduction prevention and over-temperature shutdown safeguard the device and connected components from potential damage.
  • Designed for advanced gate drive requirements with minimal external components, reducing system complexity and potential points of failure.

ISL6613BIBZ-T Applications

  • DC/DC Converters: Utilizes high-speed switching capabilities to improve efficiency in converting one DC voltage to another.
  • Solar Inverters: Employs robust gate driving to handle high power requirements, ensuring reliable performance in renewable energy systems.
  • Electric Vehicles (EV): Enhances the management of battery systems and power distribution in EVs, crucial for maintaining performance standards.
  • Uninterruptible Power Supplies (UPS): Delivers dependable and efficient gate driving critical for the stability and reliability of emergency power systems.
  • Motor Control: Supports precise control over motor functions in various industrial and consumer applications, optimizing performance and efficiency.
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