ISL6613BECBZ-T

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Mfr.Part #
ISL6613BECBZ-T
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
SOIC
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Stock
47,303
In Stock :
47,303

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
JESD-609 Code :
e3
Temperature Grade :
Other
Interface IC Type :
HALF BRIDGE BASED MOSFET DRIVER
Max Operating Temperature :
85°C
Number of Terminations :
8
Max Supply Voltage :
13.2V
Width :
3.9mm
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Pin Count :
8
Pbfree Code :
yes
Supply Voltage1-Nom :
12V
Rise Time :
26ns
Terminal Finish :
Matte Tin (Sn) - annealed
Lead Free :
Lead Free
Output Peak Current Limit-Nom :
3A
Min Supply Voltage :
7V
Time@Peak Reflow Temperature-Max (s) :
40
Package / Case :
SOIC
Peak Reflow Temperature (Cel) :
260
Operating Supply Current :
5mA
Terminal Position :
Dual
Number of Pins :
8
Published :
2001
Fall Time (Typ) :
18 ns
Mount :
Surface Mount
Number of Functions :
1
ECCN Code :
EAR99
Terminal Form :
Gull wing
Number of Drivers :
2
Power Dissipation-Max :
2W
High Side Driver :
yes
RoHS Status :
RoHS Compliant
Max Output Current :
3A
Min Operating Temperature :
0°C
Qualification Status :
Not Qualified
Current - Output :
3A
Supply Voltage :
12V
Datasheets
ISL6613BECBZ-T
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) ISL6613BECBZ-T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Package / Case:SOIC, Number of Pins:8, ISL6613BECBZ-T pinout, ISL6613BECBZ-T datasheet PDF, ISL6613BECBZ-T amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) ISL6613BECBZ-T ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) ISL6613BECBZ-T


Gate Drivers Intersil (Renesas Electronics Corporation) ISL6613BECBZ-T Overview

The ISL6613BECBZ-T from Intersil (Renesas Electronics Corporation) is a high-performance, half-bridge gate driver designed to drive MOSFETs and IGBTs. This IC is engineered to streamline power conversion in demanding environments, delivering efficient and reliable performance. Its robust design makes it ideal for applications requiring high-speed switching and durable gate drive functionality. With its advanced features, the ISL6613BECBZ-T facilitates enhanced power management and efficiency, making it a vital component in sophisticated electronic systems. The incorporation of this Gate Drivers Intersil (Renesas Electronics Corporation) ISL6613BECBZ-T device assures optimal performance in high-frequency power conversion applications.

ISL6613BECBZ-T Features

The ISL6613BECBZ-T gate driver offers dual outputs for high-side and low-side gate drive circuits, enhancing the efficiency of power conversion systems. It supports up to 3A of output drive capability and includes features such as cross-conduction prevention and an internal bootstrap diode. Additionally, the device operates over a wide supply voltage range, which makes it versatile for various power management applications.

ISL6613BECBZ-T Applications

  • DC-DC Converters: Utilizes its high-switching capabilities to enhance efficiency in voltage regulation modules and multi-phase power supplies.
  • Solar Power Inverters: Helps in the conversion of DC from solar panels to AC, ensuring efficient energy conversion for better power output.
  • Electric Vehicle (EV) Charging Stations: Plays a critical role in managing power flow during the charging process, increasing reliability and speed.
  • Uninterruptible Power Supplies (UPS): Ensures steady and reliable gate driving for critical backup power systems that require rapid switching between power sources.
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