ISL6612EIBZ-T

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Mfr.Part #
ISL6612EIBZ-T
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
SOIC
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Stock
21,716
In Stock :
21,716

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
Width :
3.9mm
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
8
High Side Driver :
yes
ECCN Code :
EAR99
Temperature Grade :
Industrial
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Interface IC Type :
HALF BRIDGE BASED MOSFET DRIVER
Max Output Current :
3A
Max Operating Temperature :
85°C
Terminal Form :
Gull wing
Rise Time :
26ns
Number of Functions :
1
Lead Free :
Lead Free
Terminal Finish :
Matte Tin (Sn) - annealed
Factory Lead Time :
7 Weeks
Height Seated (Max) :
1.68mm
Mount :
Surface Mount
Output Peak Current Limit-Nom :
3A
Max Supply Voltage :
13.2V
Number of Drivers :
2
Length :
4.89mm
JESD-30 Code :
R-PDSO-G8
Published :
2001
Time@Peak Reflow Temperature-Max (s) :
30
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Pin Count :
10, 8
Package / Case :
SOIC
Fall Time (Typ) :
18 ns
Terminal Position :
Dual
Min Supply Voltage :
10.8V
Min Operating Temperature :
-40°C
Supply Voltage1-Nom :
12V
Current - Output :
3A
Datasheets
ISL6612EIBZ-T
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) ISL6612EIBZ-T from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Package / Case:SOIC, ISL6612EIBZ-T pinout, ISL6612EIBZ-T datasheet PDF, ISL6612EIBZ-T amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) ISL6612EIBZ-T ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) ISL6612EIBZ-T


Gate Drivers Intersil (Renesas Electronics Corporation) ISL6612EIBZ-T Overview

The Gate Drivers Intersil (Renesas Electronics Corporation) ISL6612EIBZ-T is an expertly engineered half-bridge gate driver IC housed in an 8SOIC package. This device is designed to drive N-Channel MOSFETs and IGBTs in a high-efficiency, high-speed switching manner, making it a crucial component in power management technologies. With its robust design and Intersil's state-of-the-art technology, the ISL6612EIBZ-T enhances system performance across various applications. It offers optimal solutions for developing advanced power conversion systems, promising reliability and enhanced operational efficiency critical for bulk purchasing decisions by B2B customers.

ISL6612EIBZ-T Features

The ISL6612EIBZ-T includes multiple features that enhance its utility in demanding applications. It offers a high peak drive current, precise timing controls, and integrated bootstrap diodes. Additionally, its built-in shoot-through protection ensures safe operation by preventing simultaneous high-side and low-side conduction. The device operates over a broad voltage range and is compatible with a wide range of PWM input signals, which facilitates versatile deployment in various circuit configurations.

ISL6612EIBZ-T Applications

  • Power Supplies: Utilizes its high efficiency and fast switching capabilities to improve the performance and reliability of AC-DC and DC-DC converters.
  • Solar Inverters: Drives MOSFETs in solar inverters, enabling efficient power conversion from DC to AC, essential for harnessing solar energy effectively.
  • Motor Control: Applied in motor driver circuits to control the speed and torque of electric motors with precision and energy efficiency.
  • UPS Systems: Critical in uninterruptible power supplies (UPS), where reliable gate driving ensures steady operation during power outages.
  • Electric Vehicle (EV) Chargers: Facilitates the management of power flow in EV chargers, ensuring fast and safe charging cycles.
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