ISL6612BECBZ
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- Mfr.Part #
- ISL6612BECBZ
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 42,981
- In Stock ：
- 42,981
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Fall Time (Typ) :
- 18 ns
- RoHS Status :
- RoHS Compliant
- Min Operating Temperature :
- 0°C
- High Side Driver :
- yes
- Number of Terminations :
- 8
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Rise Time :
- 26ns
- Mount :
- Surface Mount
- Operating Supply Current :
- 10.5mA
- Power Dissipation-Max :
- 2W
- Number of Functions :
- 1
- Width :
- 3.9mm
- Qualification Status :
- Not Qualified
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Package / Case :
- SOIC
- Number of Drivers :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Current - Output :
- 3A
- Output Peak Current Limit-Nom :
- 3A
- Min Supply Voltage :
- 7V
- Supply Voltage1-Nom :
- 12V
- Max Operating Temperature :
- 85°C
- Pbfree Code :
- yes
- Supply Voltage :
- 12V
- ECCN Code :
- EAR99
- Pin Count :
- 8
- Number of Pins :
- 8
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Max Output Current :
- 3A
- Peak Reflow Temperature (Cel) :
- 260
- Max Supply Voltage :
- 13.2V
- Temperature Grade :
- Other
- Datasheets
- ISL6612BECBZ
Gate Drivers Intersil (Renesas Electronics Corporation) ISL6612BECBZ Overview
The ISL6612BECBZ by Intersil (Renesas Electronics Corporation) is a robust half-bridge gate driver designed to enhance the efficiency and performance of various power conversion systems. As a key component in managing efficient gate switching operations, this device plays a crucial role in minimizing switching losses while maximizing power efficiency. The compact 8-SOIC package is engineered for space-sensitive applications, making it an ideal choice for modern high-density circuit designs. By integrating advanced features such as cross-conduction prevention and adaptive dead-time management, the ISL6612BECBZ stands out as a premier solution for driving N-channel MOSFETs in high-performance power conversion applications.
ISL6612BECBZ Features
- High peak drive current capability of ±2A
- 3.3V to 5V logic compatible inputs with hysteresis
- Independent high-side and low-side drive channels
- Bootstrap capacitor driven high-side gate driver
- Cross-conduction prevention for improved reliability and performance
- Under-voltage lockout for both high-side and low-side channels
- Compact 8-SOIC package suitable for space-constrained applications
ISL6612BECBZ Applications
- DC-DC Converters: Drives high-side and low-side N-channel MOSFETs in synchronous buck or boost converters, enhancing efficiency through precise gate control.
- Solar Inverters: Used in photovoltaic systems to efficiently convert DC from solar panels to AC, optimizing power transfer and system performance.
- Motor Drives: Essential in driving MOSFETs for motor control applications, enabling efficient speed and torque management in electric vehicles and industrial machines.
- Uninterruptible Power Supplies (UPS): Improves reliability and efficiency in UPS systems by managing the switching operations of MOSFETs during power outages or unstable conditions.
- Power Management Systems: Facilitates efficient power distribution and management in complex systems like data centers, where stable and efficient power is critical.
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