ISL6612BCB-T
- Mfr.Part #
- ISL6612BCB-T
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 30,755
- In Stock :
- 30,755
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Gate Drivers
- Width :
- 3.9mm
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- Dual
- Rise / Fall Time (Typ) :
- 26ns, 18ns
- Peak Reflow Temperature (Cel) :
- 240
- JESD-30 Code :
- R-PDSO-G8
- High Side Voltage - Max (Bootstrap) :
- 36V
- Supply Voltage1-Max :
- 13.2V
- Surface Mount :
- yes
- Driven Configuration :
- Half-Bridge
- Number of Terminals :
- 8
- Mounting Type :
- Surface Mount
- Current - Peak Output (Source, Sink) :
- 1.25A, 2A
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Operating Temperature :
- 0°C ~ 125°C (TJ)
- Channel Type :
- SYNCHRONOUS
- Gate Type :
- N-Channel MOSFET
- Terminal Pitch :
- 1.27mm
- Input Type :
- Non-Inverting
- Logic Voltage - VIL, VIH :
- --
- Supply Voltage1-Nom :
- 12V
- Output Peak Current Limit-Nom :
- 3A
- Temperature Grade :
- Other
- Supply Voltage1-Min :
- 5V
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Supply Voltage-Min (Vsup) :
- 7V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- ISL6612B
- Series :
- --
- Supply Voltage-Max (Vsup) :
- 13.2V
- JESD-609 Code :
- e0
- Length :
- 4.9mm
- Voltage - Supply :
- 7 V ~ 13.2 V
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Drivers :
- 2
- Height Seated (Max) :
- 1.75mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Supply Voltage :
- 12V
- Supplier Device Package :
- 8-SOIC
- Operating Temperature (Max) :
- 85°C
- HTS Code :
- 8542.39.00.01
- High Side Driver :
- yes
- Number of Functions :
- 1
- Power Supplies :
- 5/1212V
- Pin Count :
- 8
- Datasheets
- ISL6612BCB-T

Gate Drivers Intersil (Renesas Electronics Corporation) ISL6612BCB-T Overview
The ISL6612BCB-T from Intersil, a Renesas Electronics Corporation brand, is a highly efficient and reliable gate driver designed for half-bridge applications. This integrated circuit is housed in a compact 8SOIC package, making it an ideal choice for space-constrained environments. As a Gate Driver, the ISL6612BCB-T is crafted to manage and drive the gate of N-channel power MOSFETs and IGBTs, providing robust and precise control. The incorporation of advanced features such as adaptive dead-time and shoot-through protection ensures optimal performance and reliability, making the ISL6612BCB-T a cornerstone in developing efficient power conversion and management solutions. Its utility in high-performance settings highlights its appeal to B2B customers looking to purchase in bulk for their high-tech applications.
ISL6612BCB-T Features
This gate driver IC excels in delivering high-performance with features that include under-voltage lockout, matched propagation delays, and dual outputs that simplify the control of half-bridge designs. The device also supports a wide operating voltage range and a high peak drive current, facilitating fast switching speeds and improved overall efficiency in power management circuits.
ISL6612BCB-T Applications
- DC-DC Converters: Utilized in the control circuits of DC-DC converters, the ISL6612BCB-T enhances efficiency by providing rapid and accurate switching of power components.
- Motor Control: Acts as a critical component in the gate drive circuitry for motors, where precise timing and drive strength are necessary for efficient motor operation.
- Power Supplies: Employed in the switching power supplies to improve regulation and efficiency, crucial for maintaining stable operations across varying load conditions.
- Renewable Energy Systems: Used in solar inverters and other renewable energy applications, enabling efficient power management and conversion necessary for maximizing energy harvest.
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