ISL6608IBZ

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Mfr.Part #
ISL6608IBZ
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
SOIC
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Stock
12,927
In Stock :
12,927

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Gate Drivers
Lead Free :
Lead Free
Max Operating Temperature :
85°C
Min Supply Voltage :
4.5V
Rise Time :
8ns
Width :
3.9mm
Interface IC Type :
HALF BRIDGE BASED MOSFET DRIVER
Terminal Form :
Gull wing
Supply Voltage :
5V
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Max Supply Voltage :
5.5V
Temperature Grade :
Industrial
JESD-609 Code :
e3
Min Operating Temperature :
-40°C
Terminal Position :
Dual
High Side Driver :
yes
Package / Case :
SOIC
Qualification Status :
Not Qualified
Current - Output :
4A
Power Supplies :
5V
Pbfree Code :
yes
Output Peak Current Limit-Nom :
4A
Time@Peak Reflow Temperature-Max (s) :
30
Number of Terminations :
8
Pin Count :
8
Number of Functions :
1
Fall Time (Typ) :
8 ns
Max Output Current :
4A
Terminal Finish :
Matte Tin (Sn) - annealed
Peak Reflow Temperature (Cel) :
260
Number of Drivers :
2
Length :
4.9mm
RoHS Status :
RoHS Compliant
JESD-30 Code :
R-PDSO-G8
Height Seated (Max) :
1.75mm
ECCN Code :
EAR99
Published :
2004
Datasheets
ISL6608IBZ
Introducing Gate Drivers Intersil (Renesas Electronics Corporation) ISL6608IBZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOIC, Number of Terminations:8, ISL6608IBZ pinout, ISL6608IBZ datasheet PDF, ISL6608IBZ amp .Beyond Gate Drivers Intersil (Renesas Electronics Corporation) ISL6608IBZ ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) ISL6608IBZ


Gate Drivers Intersil (Renesas Electronics Corporation) ISL6608IBZ Overview

Introducing the ISL6608IBZ from Intersil (Renesas Electronics Corporation), a robust gate driver specifically designed for high-efficiency, half-bridge power converters. This key component in modern power management technology ensures reliable operation and enhanced performance in a wide range of applications. The ISL6608IBZ is engineered to drive both high-side and low-side N-channel MOSFETs, offering a compact solution in its 8-SOIC package, ideal for streamlined, high-performance designs. Its ability to operate over a broad voltage range makes it versatile for various power systems, solidifying its position as a crucial part of energy-efficient power conversion solutions.

ISL6608IBZ Features

The ISL6608IBZ gate driver is known for its high-current driving capability and fast switching performance, which minimize losses and improve total system efficiency. Features include an adaptive dead-time control, under-voltage lockout protection, and advanced bootstrap functionality capable of handling high-frequency operations. These characteristics make the ISL6608IBZ an indispensable tool for developing reliable and high-performance power systems.

ISL6608IBZ Applications

  • DC/DC Converters: Utilizes fast switching capabilities to improve efficiency and performance in voltage regulation modules and multiphase converters.
  • Solar Inverters: Enhances power conversion processes in solar energy systems by driving MOSFETs effectively to handle variable solar inputs efficiently.
  • Electric Vehicles (EVs): Critical in managing power distribution within electric vehicles, ensuring optimal performance of the drive train and auxiliary systems.
  • Uninterruptible Power Supplies (UPS): Ensures stable operation with reliable MOSFET driving in backup power systems, crucial during power outages.
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