IS66WV51216BLL-55BLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

BOTTOM

Operating Mode :

ASYNCHRONOUS

HTS Code :

8542.32.00.41

ECCN Code :

3A991.B.2.A

Width :

6mm

Memory Size :

8Mb 512K x 16

Write Cycle Time - Word, Page :

55ns

Supply Current-Max :

0.025mA

Voltage - Supply :

2.5V~3.6V

Memory Density :

8388608 bit

I/O Type :

COMMON

Terminal Pitch :

0.75mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Length :

8mm

Memory Interface :

Parallel

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Mounting Type :

Surface Mount

Memory Type :

Volatile

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Min (Vsup) :

2.5V

Qualification Status :

Not Qualified

Access Time (Max) :

55 ns

Supply Voltage-Max (Vsup) :

3.6V

Memory Width :

16

Pin Count :

48

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

48-TFBGA

Memory Format :

PSRAM

Organization :

512KX16

Power Supplies :

3/3.3V

Number of Terminations :

48

Output Characteristics :

3-STATE

Number of Functions :

1

JESD-609 Code :

e1

Pbfree Code :

yes

Height Seated (Max) :

1.2mm

Number of Pins :

48

Supply Voltage :

3V

Standby Current-Max :

0.0001A

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tray