IS64WV51216BLL-10MLA3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Power Supplies :

2.5/3.3V

Nominal Supply Current :

140mA

Supply Voltage :

3.3V

I/O Type :

COMMON

Pin Count :

48

JESD-609 Code :

e1

Radiation Hardening :

No

Density :

8 Mb

Number of Ports :

1

Memory Interface :

Parallel

Pbfree Code :

yes

Standby Current-Max :

0.05A

Output Characteristics :

3-STATE

Address Bus Width :

19b

Memory Size :

8Mb 512K x 16

Number of Functions :

1

Word Size :

16b

Packaging :

Tray

Memory Format :

SRAM

Voltage - Supply :

2.4V~3.6V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

48

Write Cycle Time - Word, Page :

10ns

Operating Temperature :

-40°C~125°C TA

Sync/Async :

ASYNCHRONOUS

Supply Voltage-Max (Vsup) :

3.6V

Surface Mount :

yes

Factory Lead Time :

10 Weeks

Number of Pins :

48

Package / Case :

48-TFBGA

Supply Voltage-Min (Vsup) :

2.4V

Mounting Type :

Surface Mount

Memory Type :

Volatile

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

260

Memory Width :

16

Terminal Pitch :

0.75mm

Terminal Position :

BOTTOM