IS64WV25616EDBLL-10BA3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Pitch :

0.75mm

Voltage - Supply :

2.4V~3.6V

Memory Format :

SRAM

Packaging :

Tape and Reel (TR)

Length :

8mm

Screening Level :

AEC-Q100

Surface Mount :

yes

Number of Functions :

1

Package / Case :

48-TFBGA

Terminal Position :

BOTTOM

Memory Density :

4194304 bit

Write Cycle Time - Word, Page :

10ns

Supply Voltage-Min (Vsup) :

2.4V

Pbfree Code :

No

Memory Type :

Volatile

Height Seated (Max) :

1.2mm

Number of Terminations :

48

Operating Temperature :

-40°C~125°C TA

Memory Size :

4Mb 256K x 16

RoHS Status :

Non-RoHS Compliant

Access Time (Max) :

10 ns

Qualification Status :

Not Qualified

Supply Voltage-Max (Vsup) :

3.6V

I/O Type :

COMMON

Standby Voltage-Min :

2V

Supply Voltage :

3V

Number of Pins :

48

Peak Reflow Temperature (Cel) :

225

Organization :

256KX16

Power Supplies :

2.5/3.3V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supply Current-Max :

0.05mA

Mounting Type :

Surface Mount

Memory Interface :

Parallel

Memory Width :

16

Standby Current-Max :

0.015A

Width :

6mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Output Characteristics :

3-STATE