IS64WV102416BLL-10MLA3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Standby Current-Max :

0.05A

Density :

16 Mb

Number of Functions :

1

Memory Format :

SRAM

Packaging :

Tray

Memory Type :

Volatile

Address Bus Width :

20b

Memory Size :

16Mb 1M x 16

Word Size :

16b

Memory Width :

16

JESD-609 Code :

e1

Power Supplies :

2.5/3.3V

Supply Voltage :

3.3V

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

48

Operating Temperature :

-40°C~125°C TA

Number of Ports :

1

Terminal Position :

BOTTOM

Memory Interface :

Parallel

Write Cycle Time - Word, Page :

10ns

Supply Voltage-Max (Vsup) :

3.6V

Pin Count :

48

Number of Pins :

48

Output Characteristics :

3-STATE

Nominal Supply Current :

140mA

Peak Reflow Temperature (Cel) :

260

Package / Case :

48-TFBGA

Voltage - Supply :

2.4V~3.6V

I/O Type :

COMMON

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

0.75mm

Sync/Async :

ASYNCHRONOUS

Pbfree Code :

yes

Surface Mount :

yes

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Factory Lead Time :

10 Weeks

Supply Voltage-Min (Vsup) :

2.4V

Mounting Type :

Surface Mount