IS61WV51216EEBLL-10BLI-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tape and Reel (TR)

Supply Voltage-Min (Vsup) :

2.4V

Write Cycle Time - Word, Page :

10ns

Width :

6mm

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

8 Weeks

Terminal Position :

BOTTOM

Organization :

512KX16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Height Seated (Max) :

1.2mm

JESD-30 Code :

R-PBGA-B48

Supply Voltage-Max (Vsup) :

3.6V

Number of Functions :

1

Access Time (Max) :

10 ns

Number of Terminations :

48

Memory Size :

8Mb 512K x 16

Mounting Type :

Surface Mount

Memory Format :

SRAM

Surface Mount :

yes

Operating Temperature :

-40°C~85°C TA

Memory Density :

8388608 bit

Memory Width :

16

Supply Voltage :

3V

Memory Type :

Volatile

Terminal Pitch :

0.75mm

Length :

8mm

Time@Peak Reflow Temperature-Max (s) :

10

Memory Interface :

Parallel

JESD-609 Code :

e1

Voltage - Supply :

2.4V~3.6V

RoHS Status :

ROHS3 Compliant

Package / Case :

48-TFBGA