IS61WV51216BLL-10MLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Pitch :

0.75mm

Packaging :

Tray

Time@Peak Reflow Temperature-Max (s) :

40

Memory Format :

SRAM

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

ROHS3 Compliant

Pin Count :

48

Supply Voltage-Max (Vsup) :

3.6V

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Min (Vsup) :

2.4V

Memory Width :

16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Radiation Hardening :

No

Number of Functions :

1

Factory Lead Time :

8 Weeks

Memory Interface :

Parallel

Address Bus Width :

19b

Lead Free :

Lead Free

Sync/Async :

ASYNCHRONOUS

Density :

8 Mb

Surface Mount :

yes

Number of Pins :

48

Number of Ports :

1

Package / Case :

48-TFBGA

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e1

Standby Current-Max :

0.02A

Nominal Supply Current :

95mA

Mounting Type :

Surface Mount

Pbfree Code :

yes

Word Size :

16b

Memory Size :

8Mb 512K x 16

Output Characteristics :

3-STATE

Supply Voltage :

3.3V

Memory Type :

Volatile

Write Cycle Time - Word, Page :

10ns

Voltage - Supply :

2.4V~3.6V

I/O Type :

COMMON

Number of Terminations :

48

Power Supplies :

2.5/3.3V