IS61WV12816DBLL-10TLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

Dual

Number of Terminations :

44

Write Cycle Time - Word, Page :

10ns

Time@Peak Reflow Temperature-Max (s) :

10

Word Size :

16b

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Standby Voltage-Min :

2V

Operating Temperature :

-40°C~85°C TA

Factory Lead Time :

8 Weeks

Terminal Pitch :

0.8mm

Length :

18.54mm

JESD-609 Code :

e3

Output Characteristics :

3-STATE

Address Bus Width :

17b

Power Supplies :

2.5/3.3V

Radiation Hardening :

No

Supply Voltage-Min (Vsup) :

2.4V

Nominal Supply Current :

65mA

Height :

1.05mm

Width :

10.29mm

Memory Size :

2Mb 128K x 16

Voltage - Supply :

3V~3.6V

Number of Pins :

44

I/O Type :

COMMON

Pin Count :

44

Terminal Finish :

Matte Tin (Sn) - annealed

Standby Current-Max :

0.00007A

Supply Voltage :

3.3V

Surface Mount :

yes

Number of Functions :

1

Memory Format :

SRAM

Memory Type :

Volatile

Packaging :

Tray

Memory Interface :

Parallel

Number of Ports :

1

Mounting Type :

Surface Mount

Density :

2 Mb

Pbfree Code :

yes

Sync/Async :

ASYNCHRONOUS

Supply Voltage-Max (Vsup) :

3.6V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant