IS61WV12816DBLL-10BLI-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Temperature :

-40°C~85°C TA

Write Cycle Time - Word, Page :

10ns

I/O Type :

COMMON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

225

Voltage - Supply :

3V~3.6V

Memory Interface :

Parallel

Number of Ports :

1

Packaging :

Tape and Reel (TR)

Standby Voltage-Min :

2V

Radiation Hardening :

No

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Address Bus Width :

17b

Standby Current-Max :

0.00007A

Supply Voltage :

3.3V

Length :

8mm

Terminal Pitch :

0.75mm

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Memory Size :

2Mb 128K x 16

Package / Case :

48-TFBGA

Number of Terminations :

48

Word Size :

16b

Power Supplies :

2.5/3.3V

Pbfree Code :

yes

Nominal Supply Current :

65mA

Memory Type :

Volatile

Factory Lead Time :

8 Weeks

Memory Format :

SRAM

Supply Voltage-Min (Vsup) :

2.4V

Memory Width :

16

Sync/Async :

ASYNCHRONOUS

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Density :

2 Mb

Supply Voltage-Max (Vsup) :

3.6V

Number of Pins :

48

Output Characteristics :

3-STATE