IS61VPD51236A-200B3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Current-Max :

0.425mA

Pin Count :

165

Output Characteristics :

3-STATE

Width :

13mm

Supply Voltage-Min (Vsup) :

2.375V

Supply Voltage :

2.5V

Pbfree Code :

No

Terminal Finish :

Tin/Lead (Sn/Pb)

Height Seated (Max) :

1.2mm

Packaging :

Tray

Voltage - Supply :

2.375V~2.625V

Standby Current-Max :

0.06A

I/O Type :

COMMON

Memory Size :

18Mb 512K x 36

Terminal Position :

BOTTOM

Surface Mount :

yes

Memory Type :

Volatile

Operating Temperature :

0°C~70°C TA

Memory Interface :

Parallel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

165

Organization :

512KX36

Number of Terminations :

165

Terminal Pitch :

1mm

Memory Density :

18874368 bit

Clock Frequency :

200MHz

Qualification Status :

Not Qualified

Power Supplies :

2.5V

Supply Voltage-Max (Vsup) :

2.625V

ECCN Code :

3A991.B.2.A

Access Time :

3.1ns

JESD-609 Code :

e0

Memory Format :

SRAM

Number of Functions :

1

Memory Width :

36

Mounting Type :

Surface Mount

Additional Feature :

PIPELINED ARCHITECTURE

Package / Case :

165-TBGA

Length :

15mm

HTS Code :

8542.32.00.41

RoHS Status :

ROHS3 Compliant

Standby Voltage-Min :

2.38V