IS61QDB42M18-250M3L

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Time@Peak Reflow Temperature-Max (s) :

40

Supply Voltage-Min (Vsup) :

1.71V

ECCN Code :

3A991.B.2.A

Standby Current-Max :

0.2A

Qualification Status :

Not Qualified

Memory Width :

18

Packaging :

Tray

Peak Reflow Temperature (Cel) :

260

Memory Type :

Volatile

Length :

17mm

JESD-609 Code :

e1

I/O Type :

Separate

Terminal Position :

BOTTOM

Supply Voltage :

1.8V

HTS Code :

8542.32.00.41

Output Characteristics :

3-STATE

Memory Format :

SRAM

Number of Terminations :

165

Memory Size :

36Mb 2M x 18

Pin Count :

165

Standby Voltage-Min :

1.7V

Supply Voltage-Max (Vsup) :

1.89V

Terminal Pitch :

1mm

Operating Temperature :

0°C~70°C TA

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Surface Mount :

yes

Voltage - Supply :

1.71V~1.89V

Pbfree Code :

yes

Width :

15mm

Supply Current-Max :

0.5mA

Additional Feature :

PIPELINED ARCHITECTURE

Height Seated (Max) :

1.7mm

Package / Case :

165-LBGA

Clock Frequency :

250MHz

Access Time :

7.5ns

Organization :

2MX18

Mounting Type :

Surface Mount

Memory Interface :

Parallel

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN SILVER COPPER

Number of Pins :

165

Memory Density :

37748736 bit

Power Supplies :

1.5/1.81.8V