IS61QDB41M18A-250M3L

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Number of Terminations :

165

Voltage - Supply :

1.71V~1.89V

Package / Case :

165-LBGA

Number of Pins :

165

Output Characteristics :

3-STATE

Memory Size :

18Mb 1M x 18

Memory Type :

Volatile

JESD-609 Code :

e1

Terminal Position :

BOTTOM

Height Seated (Max) :

1.4mm

Peak Reflow Temperature (Cel) :

260

Organization :

1MX18

Standby Voltage-Min :

1.7V

Supply Current-Max :

0.65mA

Pin Count :

165

ECCN Code :

3A991.B.2.A

Width :

15mm

Terminal Finish :

TIN SILVER COPPER

Terminal Pitch :

1mm

Additional Feature :

PIPELINED ARCHITECTURE

Memory Width :

18

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Interface :

Parallel

Factory Lead Time :

12 Weeks

Clock Frequency :

250MHz

Memory Density :

18874368 bit

Mounting Type :

Surface Mount

HTS Code :

8542.32.00.41

Operating Temperature :

0°C~70°C TA

I/O Type :

Separate

Access Time :

1.8ns

Standby Current-Max :

0.27A

Supply Voltage-Min (Vsup) :

1.71V

Packaging :

Tray

Length :

17mm

Supply Voltage :

1.8V

Surface Mount :

yes

Number of Functions :

1

Memory Format :

SRAM

RoHS Status :

ROHS3 Compliant

Power Supplies :

1.5/1.81.8V

Time@Peak Reflow Temperature-Max (s) :

10

Supply Voltage-Max (Vsup) :

1.89V

Pbfree Code :

yes

Qualification Status :

Not Qualified