IS61QDB22M18-250M3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Supply Voltage :

1.8V

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e1

Voltage - Supply :

1.71V~1.89V

Supply Voltage-Min (Vsup) :

1.71V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pbfree Code :

yes

Memory Width :

18

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

I/O Type :

Separate

Number of Pins :

165

Nominal Supply Current :

700mA

Memory Format :

SRAM

Packaging :

Tray

Clock Frequency :

250MHz

Memory Type :

Volatile

Memory Size :

36Mb 2M x 18

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Word Size :

18b

Length :

17mm

Address Bus Width :

20b

Sync/Async :

SYNCHRONOUS

Pin Count :

165

Operating Temperature :

0°C~70°C TA

Output Characteristics :

3-STATE

Access Time :

7.5ns

Package / Case :

165-LBGA

Terminal Pitch :

1mm

Additional Feature :

PIPELINED ARCHITECTURE

Memory Interface :

Parallel

Density :

36 Mb

Standby Voltage-Min :

1.71V

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Ports :

2

Supply Voltage :

1.8V

Number of Terminations :

165

Height Seated (Max) :

1.7mm

Supply Voltage-Max (Vsup) :

1.89V