IS61NVP51236-200B3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Format :

SRAM

Memory Type :

Volatile

Memory Width :

36

Qualification Status :

Not Qualified

Width :

13mm

Pin Count :

165

Memory Density :

18874368 bit

Mounting Type :

Surface Mount

Additional Feature :

PIPELINED ARCHITECTURE

I/O Type :

COMMON

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

BOTTOM

Pbfree Code :

No

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Surface Mount :

yes

Standby Current-Max :

0.06A

Memory Size :

18Mb 512K x 36

Clock Frequency :

200MHz

Packaging :

Tray

Memory Interface :

Parallel

Length :

15mm

JESD-609 Code :

e0

Voltage - Supply :

2.375V~2.625V

Package / Case :

165-TBGA

HTS Code :

8542.32.00.41

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supply Voltage-Min (Vsup) :

2.375V

Number of Terminations :

165

Supply Voltage-Max (Vsup) :

2.625V

Organization :

512KX36

JESD-30 Code :

R-PBGA-B165

Supply Current-Max :

0.425mA

Supply Voltage :

2.5V

Terminal Pitch :

1mm

Power Supplies :

2.5V

ECCN Code :

3A991.B.2.A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height Seated (Max) :

1.2mm

Access Time :

3.1ns

Output Characteristics :

3-STATE

Standby Voltage-Min :

2.38V

Operating Temperature :

0°C~70°C TA