IS61NVP102418-250B3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

RoHS Status :

ROHS3 Compliant

Number of Terminations :

165

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Output Characteristics :

3-STATE

JESD-609 Code :

e0

Height Seated (Max) :

1.2mm

Memory Format :

SRAM

Standby Voltage-Min :

2.38V

HTS Code :

8542.32.00.41

Number of Pins :

165

Pbfree Code :

No

Power Supplies :

2.5V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Pitch :

1mm

Pin Count :

165

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

PIPELINED ARCHITECTURE

Voltage - Supply :

2.375V~2.625V

Mounting Type :

Surface Mount

Memory Density :

18874368 bit

Package / Case :

165-TBGA

Memory Width :

18

Operating Temperature :

0°C~70°C TA

Terminal Position :

BOTTOM

Supply Current-Max :

0.45mA

Organization :

1MX18

Packaging :

Tray

Surface Mount :

yes

Length :

15mm

Supply Voltage-Min (Vsup) :

2.375V

Memory Size :

18Mb 1M x 18

Supply Voltage :

2.5V

Standby Current-Max :

0.06A

Access Time :

2.6ns

Memory Interface :

Parallel

Terminal Finish :

Tin/Lead (Sn/Pb)

Clock Frequency :

250MHz

ECCN Code :

3A991.B.2.A

Supply Voltage-Max (Vsup) :

2.625V

Width :

13mm

I/O Type :

COMMON

Number of Functions :

1

Memory Type :

Volatile