IS61NVP102418-200B3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Interface :

Parallel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Additional Feature :

PIPELINED ARCHITECTURE

Standby Voltage-Min :

2.38V

Supply Current-Max :

0.475mA

Operating Temperature :

-40°C~85°C TA

Terminal Position :

BOTTOM

Voltage - Supply :

2.375V~2.625V

Packaging :

Tray

HTS Code :

8542.32.00.41

Supply Voltage :

2.5V

ECCN Code :

3A991.B.2.A

Standby Current-Max :

0.075A

Supply Voltage-Max (Vsup) :

2.625V

Terminal Pitch :

1mm

Power Supplies :

2.5V

Memory Type :

Volatile

Supply Voltage-Min (Vsup) :

2.375V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

165

Memory Format :

SRAM

Terminal Finish :

Tin/Lead (Sn/Pb)

I/O Type :

COMMON

Number of Terminations :

165

Package / Case :

165-TBGA

Height Seated (Max) :

1.2mm

Pin Count :

165

Memory Size :

18Mb 1M x 18

Organization :

1MX18

Qualification Status :

Not Qualified

JESD-609 Code :

e0

Pbfree Code :

No

Output Characteristics :

3-STATE

Memory Width :

18

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Functions :

1

Clock Frequency :

200MHz

Surface Mount :

yes

Memory Density :

18874368 bit

Width :

13mm

Access Time :

3.1ns

RoHS Status :

ROHS3 Compliant

Length :

15mm