IS61NVF25672-6.5B1I

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Finish :

Tin/Lead (Sn/Pb)

HTS Code :

8542.32.00.41

Output Characteristics :

3-STATE

Memory Width :

72

Clock Frequency :

133MHz

Terminal Pitch :

1mm

Memory Format :

SRAM

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

No

Pin Count :

209

I/O Type :

COMMON

Number of Terminations :

209

Surface Mount :

yes

Number of Functions :

1

Memory Density :

18874368 bit

Power Supplies :

2.5V

Supply Voltage-Min (Vsup) :

2.375V

Supply Voltage :

2.5V

Memory Type :

Volatile

Operating Temperature :

-40°C~85°C TA

JESD-609 Code :

e0

Standby Voltage-Min :

2.38V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Size :

18Mb 256K x 72

Terminal Position :

BOTTOM

Supply Current-Max :

0.65mA

Qualification Status :

Not Qualified

Width :

14mm

Organization :

256KX72

Height Seated (Max) :

1.95mm

Length :

22mm

ECCN Code :

3A991.B.2.A

Packaging :

Tray

Memory Interface :

Parallel

RoHS Status :

ROHS3 Compliant

Standby Current-Max :

0.075A

Number of Pins :

209

Additional Feature :

FLOW-THROUGH ARCHITECTURE

Package / Case :

209-BGA

Voltage - Supply :

2.375V~2.625V

Access Time :

6.5ns

Supply Voltage-Max (Vsup) :

2.625V