IS61NLP51236-250B3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

ECCN Code :

3A991.B.2.A

Organization :

512KX36

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

0°C~70°C TA

Terminal Position :

BOTTOM

Terminal Pitch :

1mm

Power Supplies :

2.5/3.33.3V

Memory Type :

Volatile

HTS Code :

8542.32.00.41

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Package / Case :

165-TBGA

Clock Frequency :

250MHz

Supply Voltage-Min (Vsup) :

3.135V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height Seated (Max) :

1.2mm

Output Characteristics :

3-STATE

Memory Format :

SRAM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

I/O Type :

COMMON

Supply Voltage-Max (Vsup) :

3.465V

Standby Current-Max :

0.06A

Width :

13mm

Supply Current-Max :

0.45mA

Supply Voltage :

3.3V

RoHS Status :

ROHS3 Compliant

Standby Voltage-Min :

3.14V

Length :

15mm

Additional Feature :

PIPELINED ARCHITECTURE

Pbfree Code :

No

JESD-609 Code :

e0

JESD-30 Code :

R-PBGA-B165

Number of Terminations :

165

Number of Functions :

1

Surface Mount :

yes

Memory Width :

36

Memory Density :

18874368 bit

Memory Interface :

Parallel

Memory Size :

18Mb 512K x 36

Pin Count :

165

Packaging :

Tray

Access Time :

2.6ns

Terminal Finish :

Tin/Lead (Sn/Pb)

Voltage - Supply :

3.135V~3.465V