IS61NLP25636A-200B2LI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Lead Free :

Lead Free

Access Time :

3.1ns

Supply Voltage :

3.3V

Number of Terminations :

119

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Standby Current-Max :

0.05A

Density :

9 Mb

Number of Functions :

1

Radiation Hardening :

No

Memory Type :

Volatile

Supply Voltage-Min (Vsup) :

3.135V

Memory Size :

9Mb 256K x 36

Address Bus Width :

18b

Number of Ports :

4

Length :

22mm

ECCN Code :

3A991.B.2.A

Terminal Pitch :

1.27mm

Clock Frequency :

200MHz

Memory Format :

SRAM

Operating Temperature :

-40°C~85°C TA

I/O Type :

COMMON

Terminal Position :

BOTTOM

Pin Count :

119

RoHS Status :

ROHS3 Compliant

Number of Pins :

119

Nominal Supply Current :

280mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Supply Voltage :

3.3V

Pbfree Code :

yes

Memory Interface :

Parallel

JESD-609 Code :

e1

Word Size :

36b

Organization :

256KX36

Mounting Type :

Surface Mount

Voltage - Supply :

3.135V~3.465V

Time@Peak Reflow Temperature-Max (s) :

10

Memory Width :

36

Package / Case :

119-BBGA

Output Characteristics :

3-STATE

Sync/Async :

SYNCHRONOUS

Packaging :

Tray

Additional Feature :

PIPELINED ARCHITECTURE