IS61NLP25636A-200B2I
- Mfr.Part #
- IS61NLP25636A-200B2I
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 119-BBGA
- Datasheet
- Download
- Description
- IC SRAM 9MBIT PARALLEL 119PBGA
- Stock
- 11,109
- In Stock :
- 11,109
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Pin Count :
- 119
- Qualification Status :
- Not Qualified
- Packaging :
- Tray
- Surface Mount :
- yes
- Supply Voltage-Min (Vsup) :
- 3.135V
- Additional Feature :
- PIPELINED ARCHITECTURE
- Standby Current-Max :
- 0.05A
- Terminal Pitch :
- 1.27mm
- Package / Case :
- 119-BBGA
- Pbfree Code :
- No
- Memory Size :
- 9Mb 256K x 36
- I/O Type :
- COMMON
- Supply Current-Max :
- 0.28mA
- Mounting Type :
- Surface Mount
- Number of Pins :
- 119
- Width :
- 14mm
- ECCN Code :
- 3A991.B.2.A
- Access Time :
- 3.1ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -40°C~85°C TA
- Memory Format :
- SRAM
- HTS Code :
- 8542.32.00.41
- Length :
- 22mm
- RoHS Status :
- Non-RoHS Compliant
- Memory Type :
- Volatile
- Number of Functions :
- 1
- Clock Frequency :
- 200MHz
- Output Characteristics :
- 3-STATE
- Voltage - Supply :
- 3.135V~3.465V
- Terminal Position :
- BOTTOM
- Height Seated (Max) :
- 2.41mm
- Supply Voltage-Max (Vsup) :
- 3.465V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 119
- JESD-609 Code :
- e0
- Supply Voltage :
- 3.3V
- Power Supplies :
- 2.5/3.33.3V
- Memory Interface :
- Parallel
- Memory Width :
- 36
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Memory Density :
- 9437184 bit
- Standby Voltage-Min :
- 3.14V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Organization :
- 256KX36
- Datasheets
- IS61NLP25636A-200B2I

Memory Integrated Silicon Solution, Inc. (ISSI) IS61NLP25636A-200B2I Overview
The IS61NLP25636A-200B2I, a high-performance SRAM component from Integrated Silicon Solution, Inc. (ISSI), is engineered to meet the demanding requirements of advanced computing and high-speed processing systems. This 9Mbit SRAM chip offers a robust parallel interface and is packaged in a compact 119-pin PBGA (Plastic Ball Grid Array), ensuring efficient space utilization and enhanced thermal management. The product stands out for its quick access times and reliability, making it an essential component in a broad range of applications, especially where speed and stability are critical. With the keyword Memory Integrated Silicon Solution, Inc. (ISSI) IS61NLP25636A-200B2I, this SRAM ensures optimal performance in rigorous environments.
IS61NLP25636A-200B2I Features
The IS61NLP25636A-200B2I SRAM features include a dense 9Mbit storage capacity, a swift parallel interface for rapid data access and processing, and low power consumption, which is critical for sustainable product design. The use of the 119PBGA package facilitates not only reduced physical space requirements but also significant improvements in reliability and heat dissipation, features that are paramount when designing for durability and extended operational life.
IS61NLP25636A-200B2I Applications
- Networking Equipment: Utilized in routers and switches for buffering and data queuing, ensuring efficient data management and high-speed data processing capabilities.
- Telecommunications: Critical for use in telecommunications infrastructure, providing the necessary speed and reliability for managing vast amounts of data and high-level signal processing.
- Industrial Automation: Employs in control systems where fast access to data and error-free operations are required, enhancing system reliability and performance.
- Aerospace and Defense: Used in systems requiring high-reliability memory solutions that can perform under extreme environmental conditions, aiding in navigation and other critical systems.
- Consumer Electronics: Integral to devices such as high-definition televisions and gaming consoles, where rapid access to large volumes of data is essential for user experience and functionality.
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