IS61NLP12836B-200B2LI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Surface Mount :

yes

JESD-609 Code :

e1

Pin Count :

119

Word Size :

36b

Memory Width :

36

Organization :

128KX36

Peak Reflow Temperature (Cel) :

260

I/O Type :

COMMON

Terminal Pitch :

1.27mm

Voltage - Supply :

3.135V~3.465V

Nominal Supply Current :

210mA

Mounting Type :

Surface Mount

Density :

4 Mb

Number of Terminations :

119

Radiation Hardening :

No

Pbfree Code :

yes

Operating Supply Voltage :

3.3V

Operating Temperature :

-40°C~85°C TA

Supply Voltage :

3.3V

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Pins :

119

Address Bus Width :

17b

Number of Functions :

1

Memory Type :

Volatile

ECCN Code :

3A991.B.2.A

Length :

22mm

Output Characteristics :

3-STATE

Packaging :

Tray

Memory Format :

SRAM

Package / Case :

119-BBGA

Supply Voltage-Min (Vsup) :

3.135V

Memory Size :

4.5Mb 128K x 36

RoHS Status :

ROHS3 Compliant

Clock Frequency :

200MHz

Memory Interface :

Parallel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Sync/Async :

SYNCHRONOUS

Number of Ports :

4

Standby Current-Max :

0.035A

Additional Feature :

PIPELINED ARCHITECTURE

Access Time :

3.1ns