IS61NLP102418-200B3LI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Time@Peak Reflow Temperature-Max (s) :

10

Supply Voltage-Min (Vsup) :

3.135V

Number of Functions :

1

Memory Format :

SRAM

Terminal Position :

BOTTOM

JESD-609 Code :

e1

Terminal Pitch :

1mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

I/O Type :

COMMON

Number of Pins :

165

Voltage - Supply :

3.135V~3.465V

Clock Frequency :

200MHz

Supply Voltage :

3.3V

Operating Supply Voltage :

3.3V

Length :

15mm

Density :

18 Mb

Number of Terminations :

165

Address Bus Width :

20b

Peak Reflow Temperature (Cel) :

260

Access Time :

3.1ns

Number of Ports :

2

Packaging :

Tray

Standby Current-Max :

0.075A

Pbfree Code :

yes

Package / Case :

165-TBGA

Standby Voltage-Min :

3.14V

Mounting Type :

Surface Mount

Memory Width :

18

Sync/Async :

SYNCHRONOUS

Additional Feature :

PIPELINED ARCHITECTURE

Radiation Hardening :

No

Memory Interface :

Parallel

Organization :

1MX18

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Nominal Supply Current :

475mA

RoHS Status :

RoHS Compliant

Surface Mount :

yes

Memory Size :

18Mb 1M x 18

Output Characteristics :

3-STATE

Word Size :

18b

Pin Count :

165

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Max (Vsup) :

3.465V

Memory Type :

Volatile