IS61NLF51236-7.5B3I

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Density :

18874368 bit

Additional Feature :

FLOW-THROUGH ARCHITECTURE

ECCN Code :

3A991.B.2.A

Pbfree Code :

No

Qualification Status :

Not Qualified

Memory Width :

36

Width :

13mm

Memory Type :

Volatile

Terminal Pitch :

1mm

Clock Frequency :

117MHz

Number of Pins :

165

Terminal Finish :

Tin/Lead (Sn/Pb)

Memory Format :

SRAM

Height Seated (Max) :

1.2mm

Mounting Type :

Surface Mount

Access Time :

7.5ns

Standby Voltage-Min :

3.14V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Supply Voltage-Min (Vsup) :

3.135V

Supply Current-Max :

0.475mA

I/O Type :

COMMON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Size :

18Mb 512K x 36

Number of Terminations :

165

Organization :

512KX36

Length :

15mm

Pin Count :

165

Packaging :

Tray

RoHS Status :

ROHS3 Compliant

Voltage - Supply :

3.135V~3.465V

Surface Mount :

yes

Package / Case :

165-TBGA

HTS Code :

8542.32.00.41

Supply Voltage-Max (Vsup) :

3.465V

Memory Interface :

Parallel

JESD-609 Code :

e0

Output Characteristics :

3-STATE

Operating Temperature :

-40°C~85°C TA

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Standby Current-Max :

0.075A

Power Supplies :

2.5/3.33.3V

Supply Voltage :

3.3V