IS61LV6416-10TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Length :

18.415mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Interface :

Parallel

Terminal Finish :

Matte Tin (Sn) - annealed

Standby Voltage-Min :

3.14V

Terminal Position :

Dual

Number of Functions :

1

Power Supplies :

3.3V

Terminal Pitch :

0.8mm

Number of Terminations :

44

Operating Temperature :

0°C~70°C TA

Pbfree Code :

yes

Memory Width :

16

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Standby Current-Max :

0.005A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Output Characteristics :

3-STATE

Memory Format :

SRAM

Supply Voltage-Max (Vsup) :

3.63V

Lead Free :

Lead Free

Voltage - Supply :

3.135V~3.6V

Access Time (Max) :

10 ns

Organization :

64KX16

I/O Type :

COMMON

Packaging :

Tray

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

44

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Size :

1Mb 64K x 16

Factory Lead Time :

6 Weeks

Write Cycle Time - Word, Page :

10ns

Surface Mount :

yes

Supply Voltage :

3.3V

Supply Current-Max :

0.12mA

Memory Density :

1048576 bit

Supply Voltage-Min (Vsup) :

3.135V

Height Seated (Max) :

1.2mm

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Number of Pins :

44

Width :

10.16mm

ECCN Code :

3A991.B.2.B

Memory Type :

Volatile

HTS Code :

8542.32.00.41