IS61LV12824-8BL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Radiation Hardening :

No

Access Time (Max) :

8 ns

Memory Format :

SRAM

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Number of Pins :

119

Memory Interface :

Parallel

Pin Count :

119

Memory Size :

3Mb 128K x 24

Memory Type :

Volatile

Number of Ports :

1

Voltage - Supply :

3.135V~3.63V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tray

Supply Voltage :

3.3V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Address Bus Width :

17b

Density :

3 Mb

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-609 Code :

e1

Operating Temperature :

0°C~70°C TA

Operating Supply Voltage :

3.3V

Supply Voltage-Max (Vsup) :

3.63V

Terminal Position :

BOTTOM

Length :

22mm

Output Characteristics :

3-STATE

Number of Functions :

1

I/O Type :

COMMON

Number of Terminations :

119

Pbfree Code :

yes

Memory Width :

24

Package / Case :

119-BGA

Write Cycle Time - Word, Page :

8ns