IS61LV12824-10BI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

JESD-609 Code :

e0

Memory Density :

3145728 bit

ECCN Code :

3A991.B.2.A

Output Characteristics :

3-STATE

Terminal Pitch :

1.27mm

Packaging :

Tray

RoHS Status :

Non-RoHS Compliant

Standby Current-Max :

0.02A

Memory Interface :

Parallel

Width :

14mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Access Time (Max) :

10 ns

Surface Mount :

yes

Voltage - Supply :

2.97V~3.63V

Operating Temperature :

-40°C~85°C TA

Memory Size :

3Mb 128K x 24

Height Seated (Max) :

2.41mm

Pin Count :

119

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Max (Vsup) :

3.63V

Memory Format :

SRAM

Qualification Status :

Not Qualified

Power Supplies :

3.3V

Number of Terminations :

119

Write Cycle Time - Word, Page :

10ns

Number of Functions :

1

Standby Voltage-Min :

3V

Supply Voltage-Min (Vsup) :

2.97V

Mounting Type :

Surface Mount

Package / Case :

119-BGA

Terminal Finish :

Tin/Lead (Sn/Pb)

HTS Code :

8542.32.00.41

I/O Type :

COMMON

Terminal Position :

BOTTOM

Memory Width :

24

Organization :

128KX24

Number of Pins :

119

Pbfree Code :

No

Supply Current-Max :

0.21mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supply Voltage :

3.3V

Memory Type :

Volatile

Length :

22mm