IS61LV12816L-10TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

10ns

Supply Voltage :

3.3V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

I/O Type :

COMMON

Supply Voltage-Min (Vsup) :

2.97V

Number of Terminations :

44

Number of Functions :

1

Memory Type :

Volatile

Voltage - Supply :

3.135V~3.6V

Number of Ports :

1

Supply Voltage-Max (Vsup) :

3.63V

Mount :

Surface Mount

Terminal Position :

Dual

Lead Free :

Lead Free

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - annealed

Memory Interface :

Parallel

Max Frequency :

100MHz

Standby Voltage-Min :

2V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tray

Number of Pins :

44

REACH SVHC :

No SVHC

Operating Supply Voltage :

3.3V

Address Bus Width :

17b

Word Size :

16b

Radiation Hardening :

No

Mounting Type :

Surface Mount

Terminal Pitch :

0.8mm

Output Characteristics :

3-STATE

Operating Temperature :

0°C~70°C TA

Memory Width :

16

Peak Reflow Temperature (Cel) :

260

Standby Current-Max :

0.003A

Nominal Supply Current :

60mA

Sync/Async :

ASYNCHRONOUS

Density :

2 Mb

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Pin Count :

44

Pbfree Code :

yes

Memory Size :

2Mb 128K x 16

RoHS Status :

ROHS3 Compliant

Memory Format :

SRAM