IS61LV12816L-10BLI
- Mfr.Part #
- IS61LV12816L-10BLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 48-TFBGA
- Datasheet
- Download
- Description
- IC SRAM 2MBIT PARALLEL 48MINIBGA
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Memory Type :
- Volatile
- Package / Case :
- 48-TFBGA
- Terminal Pitch :
- 0.75mm
- Word Size :
- 16b
- Memory Interface :
- Parallel
- Standby Current-Max :
- 0.004A
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Density :
- 2 Mb
- Number of Terminations :
- 48
- Mounting Type :
- Surface Mount
- Sync/Async :
- ASYNCHRONOUS
- Radiation Hardening :
- No
- Packaging :
- Tray
- Output Characteristics :
- 3-STATE
- Lead Free :
- Lead Free
- Voltage - Supply :
- 3.135V~3.6V
- Height :
- 600μm
- Operating Temperature :
- -40°C~85°C TA
- Supply Voltage-Min (Vsup) :
- 2.97V
- Supply Voltage :
- 3.3V
- Nominal Supply Current :
- 65mA
- Terminal Position :
- BOTTOM
- Operating Supply Voltage :
- 3.3V
- I/O Type :
- COMMON
- Mount :
- Surface Mount
- Length :
- 8mm
- Memory Size :
- 2Mb 128K x 16
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Write Cycle Time - Word, Page :
- 10ns
- Number of Ports :
- 1
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Width :
- 6mm
- Pin Count :
- 48
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 48
- Supply Voltage-Max (Vsup) :
- 3.63V
- Number of Functions :
- 1
- Address Bus Width :
- 17b
- Memory Format :
- SRAM
- Datasheets
- IS61LV12816L-10BLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS61LV12816L-10BLI Overview
The Memory Integrated Silicon Solution, Inc. (ISSI) IS61LV12816L-10BLI is a high-performance 2Mbit SRAM component designed for applications requiring fast access and reliable data storage. Utilizing a parallel interface, this IC offers exceptional speed with a 10 ns access time, making it an ideal solution for performance-critical applications. Its compact 48-pin Mini BGA (Ball Grid Array) package ensures minimal space usage while providing robust data integrity and retention capabilities, tailored for advanced electronics systems that demand efficient and high-speed memory operations.
IS61LV12816L-10BLI Features
The IS61LV12816L-10BLI SRAM chip by ISSI stands out with its 2Mbit storage capacity, delivering high-speed operation at a 10 ns access time. This chip is designed to perform reliably under a broad range of operating temperatures, making it suitable for both commercial and industrial applications. Its low power consumption and simple interfacing through a parallel bus add to its functionality, ensuring it meets the rigorous requirements of sophisticated electronic systems.
IS61LV12816L-10BLI Applications
- Advanced Computing: Utilized in high-speed cache and buffer memory in servers and workstations, enhancing overall system performance by providing rapid data access.
- Telecommunication Equipment: Plays a critical role in data buffering for network switches and routers, ensuring efficient data flow and system reliability in communication infrastructures.
- Automotive Electronics: Integrated into control units for real-time processing in automotive applications, supporting essential functions such as engine management and infotainment systems.
- Industrial Automation: Serves as reliable data storage in programmable logic controllers (PLCs) and other automation devices, facilitating complex processes and operations in manufacturing settings.
- Consumer Electronics: Applied in devices requiring fast access to working memory, such as gaming consoles and high-performance portable electronics.
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