IS61LPS12836A-200B2LI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Output Characteristics :

3-STATE

JESD-609 Code :

e1

Nominal Supply Current :

210mA

Additional Feature :

PIPELINED ARCHITECTURE

Mounting Type :

Surface Mount

Number of Functions :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Radiation Hardening :

No

Pin Count :

119

Length :

22mm

Supply Voltage-Min (Vsup) :

3.135V

Clock Frequency :

200MHz

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Pins :

119

Operating Supply Voltage :

3.3V

Terminal Position :

BOTTOM

Packaging :

Tray

Memory Size :

4.5Mb 128K x 36

Memory Interface :

Parallel

Terminal Pitch :

1.27mm

Voltage - Supply :

3.135V~3.465V

Package / Case :

119-BBGA

Operating Temperature :

-40°C~85°C TA

Memory Width :

36

Memory Format :

SRAM

Address Bus Width :

17b

Memory Type :

Volatile

Supply Voltage :

3.3V

ECCN Code :

3A991.B.2.A

Number of Terminations :

119

Organization :

128KX36

Sync/Async :

SYNCHRONOUS

Standby Current-Max :

0.075A

Word Size :

36b

RoHS Status :

ROHS3 Compliant

Access Time :

3.1ns

Number of Ports :

4

Time@Peak Reflow Temperature-Max (s) :

40

I/O Type :

COMMON

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Surface Mount :

yes

Density :

4.5 Mb