IS61LPD102418A-200B3I
- Mfr.Part #
- IS61LPD102418A-200B3I
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 165-TBGA
- Datasheet
- Download
- Description
- IC SRAM 18MBIT PARALLEL 165PBGA
- Stock
- 17,938
- In Stock :
- 17,938
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Voltage - Supply :
- 3.135V~3.465V
- Standby Current-Max :
- 0.075A
- Packaging :
- Tray
- Organization :
- 1MX18
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Height Seated (Max) :
- 1.2mm
- Memory Width :
- 18
- Memory Interface :
- Parallel
- Package / Case :
- 165-TBGA
- Memory Size :
- 18Mb 1M x 18
- Access Time :
- 3.1ns
- Output Characteristics :
- 3-STATE
- Number of Terminations :
- 165
- Operating Temperature :
- -40°C~85°C TA
- Width :
- 13mm
- Supply Current-Max :
- 0.475mA
- Number of Functions :
- 1
- ECCN Code :
- 3A991.B.2.A
- Terminal Pitch :
- 1mm
- Supply Voltage-Min (Vsup) :
- 3.135V
- Pbfree Code :
- No
- I/O Type :
- COMMON
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Not Qualified
- Standby Voltage-Min :
- 3.14V
- Terminal Position :
- BOTTOM
- Mounting Type :
- Surface Mount
- Memory Type :
- Volatile
- Supply Voltage-Max (Vsup) :
- 3.465V
- Additional Feature :
- PIPELINED ARCHITECTURE
- Pin Count :
- 165
- Clock Frequency :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- HTS Code :
- 8542.32.00.41
- Memory Density :
- 18874368 bit
- Length :
- 15mm
- Number of Pins :
- 165
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Memory Format :
- SRAM
- Supply Voltage :
- 3.3V
- RoHS Status :
- ROHS3 Compliant
- Power Supplies :
- 2.5/3.33.3V
- Datasheets
- IS61LPD102418A-200B3I

Memory Integrated Silicon Solution, Inc. (ISSI) IS61LPD102418A-200B3I Overview
The Memory Integrated Silicon Solution, Inc. (ISSI) IS61LPD102418A-200B3I is a high-performance 18Mbit SRAM device featuring a parallel interface and housed in a compact 165-pin PBGA package. This memory module is designed to deliver rapid read and write speeds which are crucial for applications requiring high bandwidth and low latency data storage and retrieval. Manufactured by Integrated Silicon Solution, Inc., a leader in advanced memory solutions, this product ensures robust reliability and superior performance for critical systems. The Memory Integrated Silicon Solution, Inc. (ISSI) IS61LPD102418A-200B3I SRAM is ideal for a wide range of industrial and commercial applications, reflecting its versatile capabilities and cutting-edge technology.
IS61LPD102418A-200B3I Features
The IS61LPD102418A-200B3I SRAM offers several distinctive features that make it a top choice for high-performance memory requirements:
- 18Mbit high-density memory capacity ensures ample space for large datasets and complex programs.
- Parallel interface facilitates fast data transfer rates, making it suitable for high-speed computing tasks.
- The compact 165-pin PBGA (Plastic Ball Grid Array) package provides a space-efficient solution while maintaining robustness and reliability.
- Designed for easy integration into a variety of circuit boards and systems.
- Low power consumption and high reliability enhance its suitability for sustained performance in critical applications.
IS61LPD102418A-200B3I Applications
- Advanced Computing Systems: Utilized in servers and high-performance computing platforms for fast processing and data manipulation capabilities.
- Networking Equipment: Employs in routers and switches to enhance buffer memory capabilities, ensuring efficient data flow and network stability.
- Telecommunications Infrastructure: Acts as transient data storage in telecom hardware to facilitate rapid signal processing and data handling.
- Aerospace and Defense Systems: Integrated into aerospace and defense electronics to provide reliable and quick access to critical data under harsh conditions.
- Automotive Electronics: Used in automotive control units where fast data retrieval and storage are necessary for real-time system responsiveness.
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