IS61LF102418A-7.5B3I

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Additional Feature :

PIPELINED ARCHITECTURE, FLOW-THROUGH

JESD-609 Code :

e0

Supply Voltage-Min (Vsup) :

3.135V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Memory Type :

Volatile

Supply Current-Max :

0.25mA

Memory Width :

18

Memory Format :

SRAM

Standby Current-Max :

0.075A

Operating Temperature :

-40°C~85°C TA

Memory Size :

18Mb 1M x 18

I/O Type :

COMMON

Supply Voltage-Max (Vsup) :

3.465V

Standby Voltage-Min :

3.14V

Pbfree Code :

No

Length :

15mm

Output Characteristics :

3-STATE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Interface :

Parallel

Memory Density :

18874368 bit

Mounting Type :

Surface Mount

Number of Terminations :

165

Supply Voltage :

3.3V

Qualification Status :

Not Qualified

HTS Code :

8542.32.00.41

Width :

13mm

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

165-TBGA

Voltage - Supply :

3.135V~3.465V

Organization :

1MX18

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Functions :

1

Number of Pins :

165

Pin Count :

165

Packaging :

Tray

Height Seated (Max) :

1.2mm

Power Supplies :

2.5/3.33.3V

Clock Frequency :

117MHz

Access Time :

7.5ns

Terminal Pitch :

1mm

ECCN Code :

3A991.B.2.A