IS61DDB22M18A-250M3L

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Format :

SRAM

Sync/Async :

SYNCHRONOUS

Radiation Hardening :

No

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Memory Interface :

Parallel

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tray

Clock Frequency :

250MHz

Memory Width :

18

Package / Case :

165-LBGA

Address Bus Width :

21b

Nominal Supply Current :

500mA

Memory Size :

36Mb 2M x 18

Pbfree Code :

yes

Memory Type :

Volatile

RoHS Status :

ROHS3 Compliant

Density :

36 Mb

Operating Temperature :

0°C~70°C TA

Supply Voltage :

1.8V

Number of Functions :

1

Number of Terminations :

165

Surface Mount :

yes

Pin Count :

165

Additional Feature :

PIPELINED ARCHITECTURE

Number of Ports :

1

Access Time :

8.4ns

Number of Pins :

165

Voltage - Supply :

1.71V~1.89V

Word Size :

18b

Mounting Type :

Surface Mount

Operating Supply Voltage :

1.8V