IS61DDB21M18A-300M3L

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

I/O Type :

COMMON

Pbfree Code :

yes

Power Supplies :

1.5/1.81.8V

Voltage - Supply :

1.71V~1.89V

Operating Temperature :

0°C~70°C TA

Factory Lead Time :

12 Weeks

Memory Format :

SRAM

Terminal Finish :

TIN SILVER COPPER

Packaging :

Tray

Pin Count :

165

Supply Voltage :

1.8V

Surface Mount :

yes

Memory Size :

18Mb 1M x 18

Number of Pins :

165

Supply Voltage-Max (Vsup) :

1.89V

Clock Frequency :

300MHz

Standby Voltage-Min :

1.7V

Standby Current-Max :

0.28A

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Width :

15mm

Memory Width :

18

Terminal Position :

BOTTOM

ECCN Code :

3A991.B.2.A

Memory Density :

18874368 bit

Package / Case :

165-LBGA

Number of Terminations :

165

Terminal Pitch :

1mm

Supply Current-Max :

0.55mA

Access Time (Max) :

0.45 ns

Height Seated (Max) :

1.4mm

Organization :

1MX18

RoHS Status :

ROHS3 Compliant

Memory Type :

Volatile

JESD-609 Code :

e1

Additional Feature :

PIPELINED ARCHITECTURE

Number of Functions :

1

Memory Interface :

Parallel

Length :

17mm

Time@Peak Reflow Temperature-Max (s) :

40

Output Characteristics :

3-STATE

Supply Voltage-Min (Vsup) :

1.71V

Mounting Type :

Surface Mount

HTS Code :

8542.32.00.41

Moisture Sensitivity Level (MSL) :

3 (168 Hours)