IS45S16800E-7TLA1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Size :

128Mb 8M x 16

Memory Format :

DRAM

Operating Temperature :

-40°C~85°C TA

RoHS Status :

RoHS Compliant

Sequential Burst Length :

1248FP

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Supply Current :

130mA

Mounting Type :

Surface Mount

Standby Current-Max :

0.001A

Radiation Hardening :

No

JESD-609 Code :

e3

Supply Voltage :

3.3V

Clock Frequency :

143MHz

Nominal Supply Current :

130mA

Operating Supply Voltage :

3.3V

Additional Feature :

AUTO/SELF REFRESH

ECCN Code :

EAR99

Number of Terminations :

54

Length :

22.22mm

Packaging :

Tray

Data Bus Width :

16b

Memory Type :

Volatile

Peak Reflow Temperature (Cel) :

260

Number of Ports :

1

Pbfree Code :

yes

Organization :

8MX16

Supply Voltage-Max (Vsup) :

3.6V

Density :

128 Mb

Memory Interface :

Parallel

Height Seated (Max) :

1.2mm

Terminal Finish :

Matte Tin (Sn) - annealed

Time@Peak Reflow Temperature-Max (s) :

10

Memory Width :

16

Access Time :

5.4ns

Mount :

Surface Mount

Terminal Pitch :

0.8mm

Pin Count :

54

Refresh Cycles :

4096

Address Bus Width :

14b

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Output Characteristics :

3-STATE

Number of Pins :

54

I/O Type :

COMMON

Interleaved Burst Length :

1248

Supply Voltage-Min (Vsup) :

3V

Voltage - Supply :

3V~3.6V

Number of Functions :

1