IS45S16800E-7BLA2
- Mfr.Part #
- IS45S16800E-7BLA2
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 54TFBGA
- Stock
- 6,179
- In Stock :
- 6,179
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Length :
- 8mm
- Memory Type :
- Volatile
- Refresh Cycles :
- 4096
- Number of Functions :
- 1
- Memory Size :
- 128Mb 8M x 16
- Nominal Supply Current :
- 130mA
- Packaging :
- Tray
- Clock Frequency :
- 143MHz
- Mounting Type :
- Surface Mount
- Supply Voltage-Min (Vsup) :
- 3V
- Standby Current-Max :
- 0.001A
- Operating Supply Voltage :
- 3.3V
- Memory Interface :
- Parallel
- Address Bus Width :
- 14b
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Max Supply Current :
- 130mA
- Supply Voltage-Max (Vsup) :
- 3.6V
- Sequential Burst Length :
- 1248FP
- Additional Feature :
- AUTO/SELF REFRESH
- I/O Type :
- COMMON
- Density :
- 128 Mb
- Supply Voltage :
- 3.3V
- Number of Terminations :
- 54
- Number of Pins :
- 54
- Organization :
- 8MX16
- Operating Temperature :
- -40°C~105°C TA
- Number of Ports :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Pin Count :
- 54
- Access Time :
- 5.4ns
- Interleaved Burst Length :
- 1248
- Output Characteristics :
- 3-STATE
- Terminal Pitch :
- 0.8mm
- Height Seated (Max) :
- 1.2mm
- Memory Format :
- DRAM
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Package / Case :
- 54-TFBGA
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Data Bus Width :
- 16b
- Voltage - Supply :
- 3V~3.6V
- Memory Width :
- 16
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- IS45S16800E-7BLA2
Memory Integrated Silicon Solution, Inc. (ISSI) IS45S16800E-7BLA2 Overview
Explore the pinnacle of memory technology with the IS45S16800E-7BLA2 by Integrated Silicon Solution, Inc. (ISSI). This 128MBIT PARALLEL IC DRAM, housed in a compact 54TFBGA package, redefines performance and efficiency in the realm of integrated circuits.
Designed to meet the rigorous demands of modern computing and data-intensive applications, this IC DRAM stands as a testament to ISSI's commitment to innovation and quality. Its parallel architecture ensures lightning-fast data access, while the 128MBIT capacity provides ample storage for critical information.
Whether deployed in industrial settings, embedded systems, or telecommunications infrastructure, the IS45S16800E-7BLA2 delivers unmatched reliability and performance, making it the preferred choice for B2B clients seeking superior memory solutions.
IS45S16800E-7BLA2 Features
- 128MBIT PARALLEL IC DRAM
- Manufactured by Integrated Silicon Solution, Inc. (ISSI)
- Compact 54TFBGA package
- High-speed parallel architecture
- Optimized for data-intensive applications
- Robust and reliable performance
- Ideal for industrial, embedded, and telecommunications applications
IS45S16800E-7BLA2 Applications
- Industrial Automation Systems: Power the brains behind automated manufacturing processes, ensuring seamless operation and real-time data processing.
- Embedded Systems: Enhance the performance of embedded devices such as IoT sensors, smart appliances, and automotive electronics, enabling efficient data storage and retrieval.
- Telecommunications Infrastructure: Drive the backbone of telecommunications networks with high-speed data access and storage capabilities, supporting reliable communication services for businesses and consumers alike.
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