IS45S16800E-6BLA1
- Mfr.Part #
- IS45S16800E-6BLA1
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 54TFBGA
- Stock
- 25,056
- In Stock :
- 25,056
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Terminal Pitch :
- 0.8mm
- Operating Temperature :
- -40°C~85°C TA
- RoHS Status :
- ROHS3 Compliant
- Number of Functions :
- 1
- Refresh Cycles :
- 4096
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Memory Interface :
- Parallel
- Access Time :
- 5.4ns
- Pbfree Code :
- yes
- Supply Voltage :
- 3.3V
- Number of Pins :
- 54
- Sequential Burst Length :
- 1248FP
- Organization :
- 8MX16
- Number of Terminations :
- 54
- Standby Current-Max :
- 0.001A
- Pin Count :
- 54
- Memory Density :
- 134217728 bit
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tray
- Power Supplies :
- 3.3V
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- Package / Case :
- 54-TFBGA
- Operating Mode :
- SYNCHRONOUS
- Supply Current-Max :
- 0.18mA
- Data Bus Width :
- 16b
- Length :
- 8mm
- Number of Ports :
- 1
- Surface Mount :
- yes
- Interleaved Burst Length :
- 1248
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Type :
- Volatile
- Voltage - Supply :
- 3V~3.6V
- ECCN Code :
- EAR99
- Output Characteristics :
- 3-STATE
- Peak Reflow Temperature (Cel) :
- 260
- Memory Width :
- 16
- Additional Feature :
- AUTO/SELF REFRESH
- Clock Frequency :
- 166MHz
- Supply Voltage-Max (Vsup) :
- 3.6V
- I/O Type :
- COMMON
- Height Seated (Max) :
- 1.2mm
- Supply Voltage-Min (Vsup) :
- 3V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e1
- Memory Size :
- 128Mb 8M x 16
- Memory Format :
- DRAM
- Datasheets
- IS45S16800E-6BLA1
Memory Integrated Silicon Solution, Inc. (ISSI) IS45S16800E-6BLA1 Overview
The Memory Integrated Silicon Solution, Inc. (ISSI) IS45S16800E-6BLA1 is a cutting-edge DRAM chip, designed to meet the rigorous demands of modern electronics. With a storage capacity of 128Mbit and packaged in a compact 54-pin TFBGA, this IC provides a robust solution for high-performance applications. It ensures optimal reliability and speed, essential for devices requiring rapid access to large amounts of data. The Memory Integrated Silicon Solution, Inc. (ISSI) IS45S16800E-6BLA1's efficiency and advanced design make it an excellent choice for manufacturers seeking to enhance their products with superior memory technology.
IS45S16800E-6BLA1 Features
This DRAM IC boasts several key features that make it an indispensable component for high-speed computing and electronic devices:
- High Capacity: 128Mbit of dynamic random-access memory allows for efficient handling of large data volumes.
- Parallel Interface: Enables quick data transfer rates which are crucial for high-performance computing tasks.
- Compact Form Factor: The 54TFBGA package is ideal for devices where space is at a premium, allowing for more streamlined designs.
IS45S16800E-6BLA1 Applications
- Consumer Electronics: Ideal for use in devices such as smartphones, tablets, and gaming consoles, where quick memory access is crucial.
- Computing: Serves as a key component in PCs and servers, facilitating rapid data processing and enhancing overall system performance.
- Embedded Systems: Used in automotive and industrial applications for managing real-time data processing and control tasks efficiently.
- Telecommunications: Employs in communication equipment such as routers and switches, supporting high-speed data transmission and storage.
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