IS41LV16100B-50TLI
- Mfr.Part #
- IS41LV16100B-50TLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 44-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 16MBIT PAR 44TSOP II
- Stock
- 47,871
- In Stock :
- 47,871
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Memory Size :
- 16Mb 1M x 16
- Density :
- 16 Mb
- Voltage - Supply :
- 3V~3.6V
- Nominal Supply Current :
- 180mA
- HTS Code :
- 8542.32.00.02
- Terminal Finish :
- Matte Tin (Sn) - annealed
- I/O Type :
- COMMON
- Package / Case :
- 44-TSOP (0.400, 10.16mm Width)
- Organization :
- 1MX16
- Additional Feature :
- RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Operating Mode :
- ASYNCHRONOUS
- Output Characteristics :
- 3-STATE
- Address Bus Width :
- 10b
- Pbfree Code :
- yes
- Length :
- 20.95mm
- Supply Voltage-Max (Vsup) :
- 3.6V
- Mounting Type :
- Surface Mount
- Supply Voltage :
- 3.3V
- Memory Type :
- Volatile
- ECCN Code :
- EAR99
- Number of Terminations :
- 44
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Pin Count :
- 50
- Terminal Position :
- Dual
- Number of Functions :
- 1
- Supply Voltage-Min (Vsup) :
- 3V
- Memory Interface :
- Parallel
- Number of Ports :
- 1
- Standby Current-Max :
- 0.002A
- Memory Width :
- 16
- Operating Temperature :
- -40°C~85°C TA
- Terminal Pitch :
- 0.8mm
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 44
- Refresh Cycles :
- 1024
- JESD-609 Code :
- e3
- Data Bus Width :
- 16b
- Packaging :
- Tray
- Peak Reflow Temperature (Cel) :
- 260
- Access Time :
- 25ns
- Operating Supply Voltage :
- 3.3V
- Qualification Status :
- Not Qualified
- Height Seated (Max) :
- 1.2mm
- Self Refresh :
- No
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Memory Format :
- DRAM
- Datasheets
- IS41LV16100B-50TLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS41LV16100B-50TLI Overview
The IS41LV16100B-50TLI from Integrated Silicon Solution, Inc. (ISSI) stands out as a robust and reliable DRAM chip, ideal for applications requiring high-speed data retrieval and storage. With a 16Mbit capacity, this memory component is housed in a 44-pin TSOP II package, offering compact integration with existing and new systems. The design and manufacturing quality of ISSI ensures that the IS41LV16100B-50TLI provides stability and performance consistency, making it a preferred choice for demanding memory solutions. This Memory Integrated Silicon Solution, Inc. (ISSI) IS41LV16100B-50TLI is not only about raw capacity; it's also about delivering efficient operation with a parallel interface, tailored to meet the rigorous demands of today's technology infrastructure.
IS41LV16100B-50TLI Features
The IS41LV16100B-50TLI DRAM boasts several key features that make it a competitive choice for tech integrators. This IC DRAM delivers a storage capacity of 16MBIT, operational at a power-saving voltage of 3.3V, which optimizes system power efficiency. Its access time is swift at 50ns, which enhances the throughput and performance of the overall system. The 44TSOP II package is designed for streamlined PCB layout, contributing to reduced electronic noise and improved heat dissipation.
IS41LV16100B-50TLI Applications
- Embedded Systems: Used in microcontroller-based applications to expand the onboard memory capabilities, thus allowing for more complex software and real-time processing tasks.
- Consumer Electronics: Ideal for use in devices such as digital cameras and MP3 players, where quick access to stored data is essential for user experience.
- Telecommunication Infrastructure: Plays a critical role in communication systems, such as routers and switches, enhancing data buffer management and system reliability.
- Automotive Electronics: Can be integrated into automotive systems for navigation and infotainment, providing the necessary speed and capacity for real-time data processing.
- Industrial Automation: This DRAM helps in managing complex operations in industrial computers, improving the handling of large volumes of data for automated processes.
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