IS25LP512M-RMLE

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Width :

8

Voltage - Supply :

2.3V~3.6V

JESD-609 Code :

e3

Number of Functions :

1

Number of Terminations :

16

Operating Temperature :

-40°C~105°C TA

ECCN Code :

3A991.B.1.A

Terminal Position :

Dual

Parallel/Serial :

Serial

JESD-30 Code :

R-PDSO-G16

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Packaging :

Tube

Memory Interface :

SPI - Quad I/O, QPI, DTR

Supply Voltage-Min (Vsup) :

2.3V

Operating Mode :

SYNCHRONOUS

Memory Type :

Non-Volatile

Clock Frequency :

133MHz

RoHS Status :

ROHS3 Compliant

Programming Voltage :

3V

Organization :

64MX8

Alternate Memory Width :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Width :

7.49mm

Height Seated (Max) :

2.65mm

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Supply Voltage-Max (Vsup) :

3.6V

Memory Size :

512Mb 64M x 8

Mounting Type :

Surface Mount

Write Cycle Time - Word, Page :

1.6ms

Memory Density :

536870912 bit

Length :

10.31mm

HTS Code :

8542.32.00.51

Terminal Pitch :

1.27mm

Surface Mount :

yes

Factory Lead Time :

8 Weeks

Supply Voltage :

3V

Memory Format :

Flash