IRS2609DSTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Rise Time :

220ns

Power Dissipation :

625mW

Turn-Off Delay Time :

250 ns

Resistance :

200Ohm

Qualification Status :

Not Qualified

Turn Off Time :

0.4 μs

High Side Voltage - Max (Bootstrap) :

600V

Width :

3.9878mm

Channel Type :

SYNCHRONOUS

Driven Configuration :

Half-Bridge

Peak Reflow Temperature (Cel) :

260

Published :

1996

Base Part Number :

IRS2609DSPBF

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Pins :

8

Number of Outputs :

1

Height :

1.4986mm

Voltage - Supply :

10V~20V

Mount :

Surface Mount

Terminal Form :

Gull wing

Operating Temperature :

-40°C~150°C TJ

Number of Functions :

1

Gate Type :

IGBT, N-Channel MOSFET

Rise / Fall Time (Typ) :

150ns 50ns

Number of Drivers :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Propagation Delay :

1.1 μs

RoHS Status :

RoHS Compliant

High Side Driver :

yes

Current - Peak Output (Source, Sink) :

200mA 350mA

Turn On Delay Time :

60 ns

Length :

4.9784mm

Number of Terminations :

8

Output Peak Current Limit-Nom :

0.2A

Time@Peak Reflow Temperature-Max (s) :

30

Logic Voltage - VIL, VIH :

0.8V 2.2V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Max Power Dissipation :

625mW

Fall Time (Typ) :

80 ns

JESD-609 Code :

e3

Input Type :

Non-Inverting

Output Current :

200mA

Max Output Current :

350mA

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Supply Voltage :

15V

Terminal Position :

Dual