IRS2609DSTRPBF
- Mfr.Part #
- IRS2609DSTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 37,844
- In Stock :
- 37,844
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Current - Peak Output (Source, Sink) :
- 200mA 350mA
- Max Power Dissipation :
- 625mW
- Qualification Status :
- Not Qualified
- Number of Pins :
- 8
- Power Dissipation :
- 625mW
- JESD-609 Code :
- e3
- Propagation Delay :
- 1.1 μs
- Fall Time (Typ) :
- 80 ns
- Published :
- 1996
- Operating Temperature :
- -40°C~150°C TJ
- Number of Functions :
- 1
- High Side Driver :
- yes
- Terminal Form :
- Gull wing
- Max Output Current :
- 350mA
- Voltage - Supply :
- 10V~20V
- Channel Type :
- SYNCHRONOUS
- Output Peak Current Limit-Nom :
- 0.2A
- Terminal Position :
- Dual
- Supply Voltage :
- 15V
- Base Part Number :
- IRS2609DSPBF
- Turn-Off Delay Time :
- 250 ns
- Driven Configuration :
- Half-Bridge
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Input Type :
- Non-Inverting
- Mounting Type :
- Surface Mount
- Number of Outputs :
- 1
- Output Current :
- 200mA
- Length :
- 4.9784mm
- Rise Time :
- 220ns
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Height :
- 1.4986mm
- High Side Voltage - Max (Bootstrap) :
- 600V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Gate Type :
- IGBT, N-Channel MOSFET
- Turn Off Time :
- 0.4 μs
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise / Fall Time (Typ) :
- 150ns 50ns
- Logic Voltage - VIL, VIH :
- 0.8V 2.2V
- Width :
- 3.9878mm
- Resistance :
- 200Ohm
- Number of Terminations :
- 8
- Turn On Delay Time :
- 60 ns
- Mount :
- Surface Mount
- Number of Drivers :
- 2
- Datasheets
- IRS2609DSTRPBF

Gate Drivers Infineon Technologies IRS2609DSTRPBF Overview
Introducing the IRS2609DSTRPBF, a high-performance half-bridge gate driver from Infineon Technologies, designed for efficient power management and signal amplification in complex electronic systems. This IC gate driver is housed in a compact 8SOIC package, making it ideal for space-constrained applications while providing robust performance. The IRS2609DSTRPBF excels in delivering precise control and protection for MOSFETs and IGBTs, ensuring reliable operation even under varying electrical conditions. Its integration features, including undervoltage lockout and high-side and low-side output stages, make it a pivotal component for developers looking to optimize their power electronics systems.
IRS2609DSTRPBF Features
The IRS2609DSTRPBF is equipped with several key features that enhance its functionality and reliability in driving half-bridge circuits:
- Integrated under-voltage lockout for both channels ensures stable operation and prevents system failure due to inadequate power supply.
- High pulse current output capability enhances device performance during critical operational phases.
- 3.3V and 5V input logic compatible, allowing for flexible integration with existing digital systems.
- Cross-conduction protection mechanism guards against potential damage caused by misalignment of signals.
- Compact 8SOIC package suitable for high-density mounting and applications where space is at a premium.
IRS2609DSTRPBF Applications
- DC-AC Power Inverters: Drives high-side and low-side switches in inverters, facilitating efficient power conversion for renewable energy applications.
- Motor Control Systems: Provides accurate gate driving in motor control circuits, ensuring smooth and precise motor operations.
- Switching Power Supplies: Enhances performance and reliability of power supply units by providing stable gate drive outputs.
- Class D Audio Amplifiers: Supports high fidelity and efficient operation in audio amplification systems by controlling MOSFETs effectively.
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