IRS2609DSPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Power Dissipation :

625mW

Length :

5mm

Terminal Position :

Dual

Max Output Current :

350mA

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

625mW

High Side Voltage - Max (Bootstrap) :

600V

High Side Driver :

yes

Operating Temperature :

-40°C~150°C TJ

Output Voltage :

620V

Supply Voltage :

15V

Number of Functions :

1

Output Current :

200mA

Number of Drivers :

2

Logic Voltage - VIL, VIH :

0.8V 2.2V

Rise / Fall Time (Typ) :

150ns 50ns

Gate Type :

IGBT, N-Channel MOSFET

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn Off Time :

0.4 μs

Published :

1996

Output Peak Current Limit-Nom :

0.2A

REACH SVHC :

No SVHC

Radiation Hardening :

No

Fall Time (Typ) :

80 ns

RoHS Status :

RoHS Compliant

Number of Terminations :

8

Height :

1.5mm

Turn On Delay Time :

60 ns

Number of Outputs :

1

Mounting Type :

Surface Mount

Rise Time :

220ns

Propagation Delay :

1.1 μs

JESD-609 Code :

e3

Mount :

Surface Mount

Channel Type :

SYNCHRONOUS

Current - Peak Output (Source, Sink) :

200mA 350mA

Resistance :

200Ohm

Voltage - Supply :

10V~20V

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Width :

3.9878mm

Driven Configuration :

Half-Bridge

Turn-Off Delay Time :

250 ns

Terminal Form :

Gull wing

Lead Free :

Lead Free

Number of Pins :

8

Input Type :

Non-Inverting

Nominal Supply Current :

2mA

Moisture Sensitivity Level (MSL) :

2 (1 Year)

ECCN Code :

EAR99

Base Part Number :

IRS2609DSPBF